Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 29-39

  Hofmann, Dieter H ^a   Müller, Matthias H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Micropipe elimination; SiC bulk crystal growth; Solution growth; Vapor growth

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALLIZATION; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; LIQUID PHASE EPITAXY; MASS TRANSFER; MATHEMATICAL MODELS; PHASE DIAGRAMS; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SOLUBILITY;

GROWTH LIMITING FACTORS; MICROPIPES;

SILICON CARBIDE;

EID: 0032668732     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00440-1     Document Type: Article

References (43)

1. Tsvetkov V.F., Allen S.T., Kong H.S., Carter C.H. Jr. Inst. Phys. Conf. Ser. 142:1996;17.
2. Capano M.A., Trew R.J. MRS Bull. 3(22):1997;19.
3. Tsvetkov V., Glass R., Henshall D., Asbury D., Carter C.H. Jr. Mater. Sci. Forum. 264-268:1998;3.
4. F. Dupret, J.J. Derby, K. Kakimoto, G. Müller, N. van den Bogaert (Eds.), Proceedings of the 2nd International Workshop on Modelling in Crystal Growth, J. Crystal Growth 180 (3/4) (1997).
5. F. Halden, W.P. Meuli, W.J. Fredericks, Growth of SiC Single Crystals, Final Technical Report, contract. no. NObsr-72772, Bureau of Ships, 1961.
6. Halden F.A. Proc. Conf. on Silicon Carbide, Boston 1959. 1960;115 Pergamon Press.
7. Tairov Y.M., Vodakov Y.A. Topics in Applied Physics 17: Electroluminescence. 1977;31 Springer, Berlin.
8. Griffiths L.B., Mlavsky A.I. J. Electrochem. Soc. 7(111):1964;805.
9. Yakimova R., Tuominen M., Bakin A.S., Fornall J.O., Vehanen A., Janzen E. Inst. Phys. Conf. Ser. 142:1996;101.
10. Tairov Y.M., Peev N.S., Smirnova N.A., Kalnin A.A. Cryst. Res. Technol. 21:1986;1503.
11. Tairov Y.M., Tsvetkov V.F. J. Crystal Growth. 43:1978;209.
12. Ziegler G., Lanig P., Theis D., Weyrich C. IEEE Trans. Electron. Devices ED. 30(4):1983;277.
13. Hoffmann L., Ziegler D., Theis D., Weyrich C. J. Appl. Phys. 53:1982;6962.
14. Ikeda M., Hayakawa T., Yamagiwa S., Matsunami H., Tanaka T. J. Appl. Phys. 50(12):1979;8215.
15. Dmitriev V.A. Phys. B. 185:1993;440.
16. Ivantsov V., Dmiitriev V. Mater. Sci. Forum. 264-268:1998;73.
17. Müller M., Bickermann M., Hofmann D., Weber A.D., Winnacker A. Mater. Sci. Forum. 264-268:1998;69.
18. Hofmann D., Eckstein R., Kadinski L., Kölbl M., Müller M., Müller St., Schmitt E., Weber A., Winnacker A. MRS Symp. Proc. 483:1998;301.
19. Rendakova S., Ivantsov V., Dmitriev V. Mater. Sci. Forum. 264-268:1998;163.
20. Hofmann D., Eckstein R., Makarov Y., Müller St., Schmitt E., Winnacker A., Rupp R., Stein R., Völkl J. J. Crystal Growth. 174:1997;669.
21. Sasaki T., Yokotani A. J. Crystal Growth. 99:1990;820.
22. Nakatsuka M., Fujioka K., Kanabe T., Fujita H. J. Crystal Growth. 171:1997;531.
23. Kleykamp H., Schumacher G. Ber. Bunsenges. Phys. Chem. 9(97):1993;799.
24. Scace R.I., Slack G.A. J. Chem. Phys. 30:1959;1551.
25. Dolloff R.T. WADD Tech. Report. 60:1960;143.
26. Hall R.N. J. Appl. Phys. 29:1958;914.
27. Yakimova R., Syväjärvi M., Janzen E. Mater. Sci. Forum. 264-268:1998;159.
28. Davis S.G., Anthrop D.F., Searcy A.W. J. Chem. Phys. 34:1961;659.
29. Nesmeyanov A.N. Gray R. Vapor Pressure of the Chemical Elements. 1963;263 Elsevier, Amsterdam.
30. Chesswas M., Cockayne B., Hurle D.T.J., Jakeman E., Mullin J.B. J. Crystal Growth. 11:1971;225.
31. Brice J.C. The Growth of Crystals from Liquids. 1973;301 North-Holland, Amsterdam.
32. Gillessen K., von Münch W. J. Crystal Growth. 19:1973;263.
33. Rosenberger F., Müller G. J. Crystal Growth. 65:1983;91.
34. Rosenberger F. NATO ASI Series B: Physics 210. 1989;107 Plenum, London.
35. Dorozhkin S.I., Avrov D.D., Rastegaev V.P., Tairov Y.M. Mater. Sci. Eng. B. 46:1997;296.
36. Wilcox W.R. J. Crystal Growth. 65:1983;133.
37. Tiller W.A. J. Crystal Growth. 2:1968;69.
38. Carlson A.E. Doremus R.H., Roberts B.W., Turnbull D. Growth and Perfection of Crystals. 1958;421 Wiley, New York.
39. Chernov A.A. J. Crystal Growth. 24/25:1974;11.
40. Bartlett R.W., Nelson W.E., Halden F.A. J. Electrochem. Soc. 114:1967;1149.
41. R.C. Marshall, C.E. Ryan, J. Littler, I. Berman, Proc. of the 3rd Int. Conf. on Silicon Carbide 1973, University of South Carolina Press, Columbia S.C., 1974, pp. 123.
42. Kordina O., Hallin C., Ellison A., Bakin A., Ivanov I., Henry A., Yakimova R., Tuominen M., Vehanen A., Janzen E. Appl. Phys. Lett. 69:1996;1456.
43. TDI, Gaithersburg MD, Company Brochure.