Test methods for measuring bulk copper and nickel in heavily doped p-type silicon wafers

Journal of the Electrochemical Society

Volumn 153, Issue 6, 2006, Pages

  Fabry, Laszlo ^a,b,i   Hoelzl, Robert ^a   Andrukhiv, Andre ^c   Matsumoto, Kei ^d   Qiu, Joann ^e   Koveshnikov, Sergei ^e   Goldstein, Michael ^e,i   Grabau, Ann ^f   Horie, Hiroshi ^g   Takeda, Ryuji ^h  

^a SILTRONIC AG   (Germany)

^b WACKER CHEMIE AG   (Germany)

^c Komatsu Silicon America Inc   (United States)

^d Komatsu Electronic Metals Co Ltd   (Japan)

^e INTEL CORPORATION   (United States)

^f MEMC Electronic Materials Inc   (United States)

^g SUMCO CORPORATION   (Japan)

^h Nissei Bldg   (Japan)

ⁱ ELECTROCHEMICAL SOCIETY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

OUT-DIFFUSION; ULTRATRACE PROFILING; WAFER DIGESTION;

DIFFUSION; NICKEL; POLYSILICON; SEMICONDUCTOR DOPING; SILICON WAFERS;

COPPER;

EID: 33646458992     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2186799     Document Type: Article

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