Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations

Applied Physics A: Materials Science and Processing

Volumn 72, Issue 3, 2001, Pages 351-356

  Holzl R ^a,b   Huber, A ^b   Fabry, L ^b   Range, K J ^a   Blietz, M ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041169489     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390000721     Document Type: Article

References (38)

1. R. Winkler, G. Behnke: In Semiconductor Silicon 1994, ed. by H.R. Huff, W. Bergholz, K. Sumino (The Electrochemical Society Proceedings Series, Pennington, N.J. 1994) PV 94-10, p. 973
2. J.G. Park, G.S. Lee, J.M. Park, S.M. Chon, H.K. Chung: In Defects in Silicon III, ed. by W.M. Bullis, W. Lin, P. Wagner, T. Abe, S. Kobayashi (The Electrochemical Society Proceedings Series, Pennington, N.J. 1999) PV 99-1, p. 324
3. D. Huber, G. Obermeier, J. Hage: (Proc. of Productronica München, Germany, 1998) p. 103
4. C. Claeys, A. Poyai, E. Simuen, A. Czerwinski, J. Katcki: J. Electrochem. Soc. 146, 1151 (1999)
5. G. Obermeier, D. Huber: J. Appl. Phys. 81, 7345 (1997)
6. A. Bazzali, G. Borionetti, R. Orizio, D. Gambaro, R. Falster: Mater. Sci. Eng. B 236, 85 (1996)
7. http://notes.sematech.org/ntrs/Rdmpmem.nsf
8. K. Honda, A. Ohsawa, N. Toyokura: Appl. Phys. Lett. 45, 270 (1984)
9. W. Bergholz, W. Mohr, W. Drewes, H. Wendt: Mater. Sci. Eng. B 4, 359 (1989)
10. D.R. Wolters, J.J. van der School: In Philips J. Res.: 40, 115 (1985)
11. E.P. Burte, W. Aderhold: Solid-State Electron. 41, 1021 (1997)
12. W. Aderhold: PhD thesis, University of Erlangen-Nürnberg, Germany (1995)
13. E.D. Grann, A. Huber, J. Grabmeier, R. Hölzl, R. Wahlich: ASTM Committee F-1 on Electronics, Conference on Gate Dielectric Integrity, Material, Process, and Tool Qualification, San Jose Hyatt, San Jose, Calif., USA, 25 January 1999
14. M. Itsumi: E-MRS Spring Meeting, 1-4 June 1999, Strasbourg, France (1999)
15. M. Obry, W. Bergholz, H. Cerva, W. Kürner, M. Schrems, J. Sachse, R. Winkler: In Defects in Silicon III, ed. by W.M. Bullis, W. Lin, P. Wagner, T. Abe, S. Kobayashi (The Electrochemical Society Proceedings Series, Pennington, N.J. 1999) PV 99-1, p. 133
16. H. Watanabe, K. Fujita, M. Ichikawa: Appl. Phys. Lett. 72, 1987 (1998)
17. L. Manchanda: In Semiconductor Characterization, ed. by W.M. Bullis, D.G. Seiler, A.C. Diebolot (1996) p. 123
18. D. Z.-Y. Ting: Appl. Phys. Lett. 73, 2769 (1998)
19. K. Eriguchi, M. Niwa: Appl. Phys. Lett. 73, 1985 (1998)
20. S. De Gendt, M.D. Knotter, K. Kenis, P.W. Mertens, M.M. Heyns: J. Electrochem. Soc. 145, 2589 (1998)
21. B. Chin, P. Ding, B. Sun, T. Chiang, D. Angelo, I. Hashim, Z. Xu, S. Edelstein, F. Chen: Solid State Technol. 141 (1998)
22. T. Taylor, T. Ritzdorf, F. Lindberg, B. Carpenter, M. LeFebvre: Solid State Technol. 47 (1998)
23. S. Hymes, K.S. Kumar, S.P. Murarka, P.J. Ding, W. Wang, W.A. Lanford: J. Appl. Phys. 83, 4507 (1998)
24. J.R. Lineback: Semiconductor Business News, 1 (1998)
25. P. Singer: Semicond. Int. 91 (1998)
26. S.-Q. Wang: MRS Bull. 30 (1994)
27. Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, W.G. Oldham: J. Electrochem. Soc. 140, 2427 (1993)
28. J.M.E. Harper, E.G. Colgan, C-K. Hu, J.P. Hummel, L.P. Buchwalter, C.E. Uzoh: MRS Bull. 23 (1994)
29. W. Bergholz, G. Zoth, F. Gelsdorf, B. Kolbesen: In Defects in Silicon II, ed. by W.M. Bullis, U. Gosele, F. Shimura (The Electrochemical Society Proceedings Series, Pennington, N.J. 1991) PV 91-9, p. 21
30. K. Graff: Metal Impurities in Silicon-Device Fabrication (Springer, Berlin Heidelberg New York 1995)
31. G. Kissinger, J. Vanhellemont, G. Morgenstern, M. Blietz, K. Tittelbach-Hemrich, G. Obermeier, R. Wahlich: In Defects in Silicon III, ed. by W.M. Bullis, W. Lin, P. Wagner, T. Abe, S. Kobayashi (The Electrochemical Society Proceedings Series, Pennington, N.J. 1999) PV 99-1, p. 268
32. S. Wolf: Silicon Processing for the VLSI Era, The Submicron MOSFET, Vol. 3 (Lattice Press, Sunset Beach, Calif. 1995)
33. F. Secco d'Aragona: J. Electrochem. Soc. 119, 948 (1972)
34. R. Hoelzl, K.-J. Range, L. Fabry, D. Huber: J. Electrochem. Soc. 146, 2245 (1999)
35. SEMI M33-0998: Semiconductor Equipment and Materials International (SEMI) (Mountain View, Calif., USA 1998)
36. L. Fabry, S. Pahlke, L. Kotz, H. Rüfer, T. Ehmann, K. Bächmann: In Crystalline Defects, and Contamination: Their Impact and Control in Device Manufacturing II, ed. by B.O. Kolbesen, P. Stallhofer, C. Claeys, F. Tardiff (The Electrochemical Society Proceedings Series, Pennington. N.J. 1997) PV 97-22, p. 469
37. R. Hölzl L. Kotz, S. Pahlke, L. Fabry: J. Anal. Chem. 366, 64 (2000)
38. J. Wong-Leung, D.J. Eaglesham, J. Sapjeta, D.C. Jacobson, J.M. Poate, J.S. Williams: J. Appl. Phys. 83, 580 (1998)