Comparison of nickel and iron gettering in Cz silicon wafers

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 367-372

  Kirscht, F ^a   Orschel, B ^a   Rouvimov, S ^a   Shabani, M ^a  

^a Mitsubishi Silicon America   (United States)

Author keywords

Atomic absorption spectroscopy; Critical bulk defect density; Cz silicon; Epitaxial silicon; External gettering; Gettering efficiency; Internal gettering; Photoluminescence

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); IRON; NICKEL; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; TEMPERATURE;

ATOMIC ABSORPTION SPECTROSCOPY; CRITICAL BULK DEFECT DENSITY; EXTERNAL GETTERING; GETTERING EFFICIENCY; INTERNAL GETTERING; PHOTOLUMINESCENCE MAPPING;

SILICON WAFERS;

EID: 0036129336     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (4)