A study of metal impurities behavior due to difference in isolation structure on ULSI devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 5900-5903

  Matsukawa, Kazuhito ^a   Yamamoto, Hidekazu ^a   Mashiko, Yoji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Bulk micro defect (BMD); Convergent beam electron diffraction (CBED); Local oxidation of silicon (LOCOS); Metal impurities; Shallow trench isolation (STI)

Indexed keywords

COMPUTER SIMULATION; COPPER; CRYSTAL DEFECTS; ELECTRON DIFFRACTION; IMPURITIES; NICKEL; OXIDATION; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

BULK MICRO DEFECT; CONVERGENT BEAM ELECTRON DIFFRACTION; LOCAL OXIDATION OF SILICON; METAL IMPURITIES; SHALLOW TRENCH ISOLATION;

ULSI CIRCUITS;

EID: 0036819442     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5900     Document Type: Article

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