Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 539-546

  Shabani, Mohammad B ^a   Shiina, Y ^a   Shimanuki, Y ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

Atomic Absorption Spectroscopy; BMD; Boron Gettering; Copper; Denuded Zone; Gettering Efficiency; Internal Gettering; Iron; Nickel; Oxide Precipitate

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC SPECTROSCOPY; BORON; CONTAMINATION; CORRELATION METHODS; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; HIGH TEMPERATURE EFFECTS; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; PRECIPITATION (CHEMICAL); SILICON WAFERS; TUNING;

ATOMIC ABSORPTION SPECTROSCOPY (AAS); GETTERING EFFICIENCY (GE); INTERNAL GETTERING (IG); THERMAL SIMULATION PROCESSES;

CRYSTAL IMPURITIES;

EID: 1642438209     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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