Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 95-98

  Hoelzl, R ^a   Range, K J ^a   Fabry, L ^b   Hage, J ^b   Raineri, V ^c  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b SILTRONIC AG   (Germany)

^c CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; DIFFUSION; ETCHING; HELIUM; ION IMPLANTATION; NICKEL; POLYSILANES; SOLUBILITY; STACKING FAULTS;

COUPLED PLASMA MASS SPECTROMETRY; GETTERING EFFICIENCY; POLYSILICON;

SILICON WAFERS;

EID: 0033898952     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00442-0     Document Type: Article

References (8)

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