Leakage Current Distribution and Dielectric Breakdown of Cu-Contaminated Thin SiO2

Journal of the Electrochemical Society

Volumn 151, Issue 4, 2004, Pages

  Tokuda, Norio ^a   Nishiguchi, Shingo ^a   Yamasaki, Satoshi ^b   Miki, Kazushi ^b,c   Yamabe, Kikuo ^a,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d Tsukuba Research Center for Interdisciplinary Materials Science TIMS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CONTAMINATION; DEGRADATION; DIELECTRIC PROPERTIES; LEAKAGE CURRENTS; MICROSCOPIC EXAMINATION; OXIDATION; RELIABILITY; SILICON COMPOUNDS; TOPOLOGY; X RAY FILMS;

DIELECTRIC BREAKDOWN; DIELECTRIC DEGRADATION; METALOXIDE-SEMICONDUCTOR (MOS) SYSTEMS; ULTRALARGE-SCALE INTEGRATED CIRCUITS (ULSI);

SEMICONDUCTING FILMS;

EID: 2042446409     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1649984     Document Type: Article

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