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Volumn 43, Issue 8 A, 2004, Pages 5166-5173

Junction leakage generation by NiSi thermal instability characterized using damage-free n+/p silicon diodes

Author keywords

Annealing; Burst; Clustering; GR center; Junction leakage; Ni diffusion; Nickel; Solid phase diffusion; Suicide; Thermal instability

Indexed keywords

ANNEALING; BOUNDARY CONDITIONS; ETCHING; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING SILICON; THERMAL DIFFUSION; THERMODYNAMIC STABILITY;

BURST; CLUSTERING; GR CENTER; JUNCTION LEAKAGE; NI DIFFUSION; SILICIDE; SOLID PHASE DIFFUSION; THERMAL INSTABILITY;

NICKEL;

EID: 6344219953 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.5166 Document Type: Article

Times cited : (34)

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