Thermal stability of copper precipitates in silicon

Applied Physics Letters

Volumn 77, Issue 22, 2000, Pages 3598-3600

  McHugo, Scott A ^a   Flink, C ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000072432     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1328769     Document Type: Article

References (24)

1. T. Y. Tan, E. E. Garnder, and W. K. Tice, Appl. Phys. Lett. 30, 175 (1977).
2. W. K. Tice and T. Y. Tan, Mater. Res. Soc. Symp. Proc. 2, 367 (1981).
3. D. Gilles, E. R. Weber, and S. K. Hahn, Phys. Rev. Lett. 64, 196 (1990).
4. E. R. Weber, Appl. Phys. A: Solids Surf. 30, 1 (1983).
5. T. Heiser, presented at Materials Research Society, San Francisco (unpublished).
6. B. Shen, T. Sekiguchi, J. Jablonski, and K. Sumino, J. Appl. Phys. 76, 4540 (1994).
7. S. Oguishi, N. Reilly, S. Sadamitsu, Y. Koike, and M. Sano, presented at materials Research Society, Defect and Impurity Engineered Semiconductors II, San Francisco, edited by S. Ashok, J. Chevallier, K. Sumino, B. Sopori, and W. Gotz (Materials Research Society, 1998), pp. 227-232.
8. H. B. Aaron and G. R. Kotler, Metall. Trans. 2, 393 (1971).
9. S. A. McHugo, C. Rink, A. Mohammed, A. C. Thompson, and B. Lai, presented at TMS, Nashville. TN (TMS, 2000) (unpublished).
10. H. Hieslmair, A. A. Istratov, S. A. McHugo, C. Flink, T. Heiser, and E. R. Weber, Appl. Phys. Lett. 72, 1460 (1998).
11. M. Seibt and K. Graff, J. Appl. Phys. 63, 4444 (1988).
12. R. R. Kola, G. A. Rozgonyi, J. Li, W. B. Rogers, T. Y. Tan, K. E. Bean, and K. Lindberg, Appl. Phys. Lett. 55, 2108 (1989).
13. C. Flink, H. Feick, S. A. McHugo, A. Mohammed, W. Seifert, H. Hieslmair, T. Heiser, A. Istratov, and E. R. Weber, Physica B 273-4, 437 (1999).
14. N. Gay and S. Martinuzzi, Appl. Phys. Lett. 70, 2568 (1997).
15. J. H. Underwood, C. Thompson, Y. Wu, and R. D. Giauque, Nucl. Instrum. Methods Phys. Res. A 266, 318 (1988).
16. S. A. McHugo, A. C. Thompson, C. Flink, E. R. Weber, G. Lamble, R. Gunion, A. MacDowell, R. Celestre, H. Padmore, and Z. Hussain, J. Cryst. Growth 210, 395 (2000).
17. M. D. de Coteau, P. R. Wilshaw, and R. Falster, Phys. Status Solidi A 117, 403 (1990).
18. S. A. McHugo, Appl. Phys. Lett. 71, 1984 (1997).
19. B. Shen, T. Sekiguchi, R. Zhang, Y. Shi, H. Shi, K. Yang, Y. Zheng, and K. Sumino, Jpn. J. Appl. Phys., Part 1 35, 3301 (1996).
20. K. J. Solberg, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 34, 684 (1978).
21. M. Seibt, presented at Proceedings of the 6th International Symposium on Silicon Materials Science and Technology: Semiconductor 1990, edited by H. R. Huff, K. G. Baraclough, and J. Chikawa (The Electrochemical Society, 1990), Vol. 90-7, p. 663.
22. S. Sadamitsu, A. Sasaki, M. Hourai, S. Sumita, and N. Fujino, Jpn. J. Appl. Phys., Part 1 30, 1591 (1991).
23. T. Kitano, J. Electron. Mater. 21, 1027 (1992).
24. W. K. Tice and T. Y. Tan, Appl. Phys. Lett. 28, 564 (1976).