Effect of cobalt and copper contamination on the electrical properties of processed silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4218, Issue , 2000, Pages 278-286

  Benton, Janet ^a   Boone, Tom ^a   Jacobson, Dale ^a   Silverman, Paul ^a   Rafferty, Conor ^a   Weinzierl, Steve ^a   Vu, Bao ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; CONTAMINATION; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRIC PROPERTIES; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES;

PROCESSED SILICON;

SILICON WAFERS;

EID: 0034449248     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. M.M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, D.M. Knotter, L.M. Loewenstein, M. Lux, P.W. Mertens, S. Mertens, M. Meuris, M. Schaekers, P. Snee, I. Teerlinck and R. Vos, International Electron Devices Meeting, p. 325, 1998.
3. M. Horuai, et. al., Jpn. J. Appl. Phys., 27, L2361 (1998).
4. A.A. Istratov and E.R. Weber, Appl. Phys. A, 66, 123 (1998).
5. K. Graff, Metal Impurities in Silicon-Device Fabrication, (Springer Verlag, Berlin 1995) p. 120.