Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13119-13125

  Yli Koski, M ^a   Palokangas, M ^a   Haarahiltunen, A ^a   Vainola H ^a   Storgards J ^a   Holmberg, H ^a   Sinkkonen, J ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL BONDS; CONTAMINATION; COPPER; DIFFUSION; ELECTRIC CORONA; LIGHT; MICROWAVES; OPTICAL VARIABLES MEASUREMENT; OXYGEN; PHOTOCONDUCTIVITY; PRECIPITATION (CHEMICAL);

HIGH INTENSITY BIAS LIGHT; INTERSTITIAL COPPER; LOW LEVEL COPPER CONTAMINATION; MICROWAVE PHOTOCONDUCTIVE DECAY MEASUREMENT; RECOMBINATION;

SEMICONDUCTING SILICON;

EID: 0037122088     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/358     Document Type: Article

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