Out-diffusion and precipitation of copper in silicon: an electrostatic model

Physical Review Letters

Volumn 85, Issue 23, 2000, Pages 4900-4903

  Flink, Christoph ^a,b   Feick, Henning ^a   McHugo, Scott A ^a,c   Seifert, Winfried ^a   Hieslmair, Henry ^a   Heiser, Thomas ^a,d   Istratov, Andrei A ^a   Weber, Eicke R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; COPPER; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTROSTATICS; PRECIPITATION (CHEMICAL); QUENCHING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROSTATIC INTERACTION; FREE FLOATING ZONE; MOBILE INTERSTITIAL COPPER; TRANSIENT ION DRIFT TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0034430831     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.4900     Document Type: Article

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