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Materials Science in Semiconductor Processing

Volumn 7, Issue 3 SPEC. ISS., 2004, Pages 101-111

First-principles theory of copper in silicon

(1) Estreicher, Stefan K a

a TEXAS TECH UNIVERSITY (United States)

Author keywords

Copper; Hydrogen; Native defects; Oxygen; Silicon; Theory

Indexed keywords

CHEMICAL BONDS; IMPURITIES; PRECIPITATION (CHEMICAL); SEMICONDUCTOR MATERIALS; SILICON; SUBSTITUTION REACTIONS; TRANSITION METALS;

FIRST-PRINCIPLES THEORY; INTERSTITIAL COMPOUNDS; NATIVE DEFECTS;

COPPER;

EID: 5044228076 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2004.06.004 Document Type: Article

Times cited : (25)

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