Formation of nickel disilicide using nickel implantation and rapid thermal annealing

Journal of Electronic Materials

Volumn 32, Issue 10, 2003, Pages 1072-1078

  Choi, Chel Jong ^a   Chang, Sung Young ^a   Ok, Young Woo ^a   Seong, Tae Yeon ^a   Gan, H ^b   Pan, G Z ^b   Tu, K N ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ni implantation; Nickel disilicide; Secondary ion mass spectroscopy; Transmission electron microscopy; X ray photoemission spectroscopy

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLIZATION; DISSOLUTION; ION IMPLANTATION; NUCLEATION; PHASE TRANSITIONS; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NICKEL DISILICIDE; REPRECIPITATION; RIPENING; SILICIDE MEDIATED CRYSTALLIZATION; SOLID PHASE EPITAXIAL GROWTH;

NICKEL COMPOUNDS;

EID: 0242273207     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0090-6     Document Type: Article

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