Optimisation of a combined transient-ion-drift/rapid thermal annealing process for copper detection in silicon

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 218-221

  Belayachi, A ^a   Heiser, T ^a   Schunck, J P ^a   Bourdais, S ^b   Bloechl, P ^c   Huber, A ^c   Kempf, A ^c  

^a CNRS   (France)

^b JIPELEC   (France)

^c SILTRONIC AG   (Germany)

Author keywords

Copper; Diffusion; Dissolution; Precipitation; Silicon; TID

Indexed keywords

ANNEALING; COPPER; DIFFUSION; DISSOLUTION; PRECIPITATION (CHEMICAL); SUPERSATURATION; ULTRAVIOLET RADIATION;

TRANSIENT ION DRIFT (TID);

SILICON;

EID: 0041511659     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00735-3     Document Type: Conference Paper

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