Direct evidence of internal Schottky barriers at NiSi2 precipitates in silicon by electron holography

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Formanek, Petr ^a   Kittler, Martin ^a  

^a Innovations for High Performance ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON-ION MILLING; ELECTRON WAVES; PHASE WRAPPING; SCHOTTKY BARRIERS;

CHARGE CARRIERS; CONCENTRATION (PROCESS); CURRENT DENSITY; DEGRADATION; DOPING (ADDITIVES); ELECTRON BEAMS; ELECTRON HOLOGRAPHY; NICKEL COMPOUNDS; PRECIPITATION (CHEMICAL); TUNNEL JUNCTIONS;

SCHOTTKY BARRIER DIODES;

EID: 20644455547     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1863432     Document Type: Article

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