Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

Applied Physics Letters

Volumn 83, Issue 15, 2003, Pages 3048-3050

  Xi, Zhenqiang ^a   Yang, Deren ^a   Xu, Jin ^a   Ji, Yujie ^a   Que, Duanlin ^a   Moeller, H J ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; ETCHING; OPTICAL MICROSCOPY; POINT DEFECTS; PRECIPITATION (CHEMICAL); SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

SCANNING INFRARED MICROSCOPY (SIRM);

COPPER;

EID: 0242272679     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1617377     Document Type: Article

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