Oxidation behaviour of Cu thin films on Si wafer at 175-400°C

Materials Letters

Volumn 51, Issue 1, 2001, Pages 78-84

  Gao, W ^a   Gong, H ^b,e   He, J ^b   Thomas, A ^b   Chan, L ^c   Li, S ^d  

^a UNIVERSITY OF AUCKLAND   (New Zealand)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e Tel: +65 874 6598 ^*  (Singapore)

Author keywords

Atomic force microscopy (AFM); Copper; Diffusion; Oxidation; Thin films

Indexed keywords

INTERCONNECTION MATERIALS;

ATOMIC FORCE MICROSCOPY; COPPER; DIFFUSION; METALLIC FILMS; OXIDATION; SILICON WAFERS; THERMAL EFFECTS; ULSI CIRCUITS;

THIN FILMS;

EID: 0035478037     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00268-3     Document Type: Article

References (18)