Nickel solubility in intrinsic and doped silicon

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Istratov, A A ^a   Zhang, P ^a   McDonald, R J ^b   Smith, A R ^b   Seacrist, M ^c   Moreland, J ^d   Shen, J ^d   Wahlich, R ^e   Weber, E R ^a  

^a Lawrence Berkeley National Laboratory   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c MEMC Electronic Materials Inc   (United States)

^d Siltronic Corp   (United States)

^e SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; ELECTRON DONORS; EPITAXIAL WAFERS; RAPID QUENCHING;

ACTIVATION ANALYSIS; ENERGY GAP; ERRORS; FERMI LEVEL; NEUTRONS; NICKEL; SOLUBILITY; SUBSTITUTION REACTIONS;

SEMICONDUCTING SILICON;

EID: 19944433285     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1836852     Document Type: Article

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