Copper blocking ability of nitrogen-incorporated silicon oxide film

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1323-1328

  Takeda, Ken Ichi ^a   Ryuzaki, Daisuke ^a   Mine, Toshiyuki ^a   Hinode, Kenji ^a   Yoneyama, Ryo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; NITROGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

FLOW RATIO;

THIN FILMS;

EID: 0141569895     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1587141     Document Type: Conference Paper

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