Low-temperature out-diffusion of Cu from silicon wafers

Journal of the Electrochemical Society

Volumn 143, Issue 6, 1996, Pages 2025-2029

  Shabani, Mohammad B ^a   Yoshimi, Toshihiro ^a   Abe, Hidenobu ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC SPECTROSCOPY; CONTAMINATION; DIFFUSION; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; IMPURITIES; LOW TEMPERATURE OPERATIONS; SILICON WAFERS; SURFACE CLEANING; SURFACE MEASUREMENT; X RAY SPECTROSCOPY;

GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROSCOPY; LOW TEMPERATURE OUT DIFFUSION; TOTAL X RAY FLUORESCENCE SPECTROSCOPY;

COPPER;

EID: 0030168806     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836943     Document Type: Article

References (20)

1. W. Kern, in Handbook of Semiconductor Wafer Cleaning Technology, W. Kern, Editor, p. 596, Noyes Publications, Park Ridge, NJ (1993).
2. A. Ourmazd and W. Schroter, Appl. Phys. Lett., 45, 781 (1984).
3. M. Sano, M. Hourai, M. Miyazaki, N. Fujino, and T. Shiraiwa, Jpn. J. Appl. Phys., 29, 1220 (1988).
4. D. Gilles and H. Ewe, in Semiconductor Silicon/1994, H. R. Huff, W. Bergholz, and K. Sumino, Editors, PV 94-10, p. 772, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
5. L. Jastrzebski, G. Cullen, and R. Soydan, This Journal, 137, 303 (1990).
6. M. Hourai, T. Naridomi, Y. Oka, K. Murakami, S. Sumita, N. Fujino, and T. Shiraiwa, Jpn. J. Appl. Phys., 27, L2361 (1988).
7. M. B. Shabani, T. Yoshimi, H. Abe. M. Fukuda, and Y. Sayama, Abstract 396, p. 608, The Electrochemical Society Extended Abstracts, Vol. 94-2, Miami Beach, FL, Oct. 9-14, 1994.
8. M. B. Shabani, T. Yoshimi, H. Abe, M. Fukuda, and Y. Sayama, Abstract 2H09, p. 405, 44th Annual Meeting of The Japan Society of Analytical Chemistry, Hokkaido (1995).
9. E. R. Weber, Appl. Phys. A, 30, 22 (1983).
10. E. R. Weber and D. Gilles, in Semiconductor Silicon/1990, H. R. Huff, K. G. Barraclough, and J. Chikawa, Editors, PV 90-7, p. 585, The Electrochemical Society Proceedings Series, Pennington, NJ (1990).
11. J. Utzig and D. Gilles, Mater. Sci. Forum, 38-41, Trans. Tech., p. 729 (1989).
12. M. Seibt and K. Graff, J. Appl. Phys. 63, 4444 (1988).
13. W. Bergholz, J. Phys. D, 14, 1099 (1981).
14. A. S. Salih, H. J. Kim, R. F. Davis, and G. A. Rozgonyi, Appl. Phys. Lett. 46, 419 (1985).
15. M. B. Shabani, T. Yoshimi, H. Abe, T. Nakai, and B. Cordts, in Silicon-on-Insulator Technology and Devices VII, P. L. F. Hemment, S. Cristoloveanu, K. Izumi, T. Houston, and S. Wilson, Editors, PV 96-3, p. 162, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
16. J. S. Kang and D. K. Schroder, J. Appl. Phys. 65, 2974 (1989).
17. R. N. Hall and J. H. Racette, ibid., 35, 379 (1964).
18. R. L. Meek and T. E. Seidel, J. Phys. Solids, 36, 731 (1975).
19. T. Ohmi, T. Imaoka, I. Sugiyama, and T. Kezuka, This Journal, 139, 3317 (1992).
20. T. H. Park, Y. S. Ko, T. E. Shim, J. G. Lee, and Y. K. Kim, ibid., 142, 571 (1995).