Copper-related degradation of SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress: Leakage of the minority charge carriers in the inversion layer

Applied Physics Letters

Volumn 85, Issue 4, 2004, Pages 627-629

  Kohn, A ^a   Lipp, E ^a   Eizenberg, M ^a   Shacham Diamand, Y ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; METALLIZING; PHASE SHIFT; REDUCTION; SILICA; SYNTHESIS (CHEMICAL); THERMAL STRESS; VELOCITY MEASUREMENT;

CHEMICAL DEGRADATION; ELECTRON-GUN DEPOSITION; FLAT-BAND VOLTAGE SHIFT; OXIDE CONDUCTIVITY;

MOS CAPACITORS;

EID: 4043166119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773925     Document Type: Article

References (6)

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