Atomic bridging and barrier-type AC surface photovoltage measurements on iron- and copper-contaminated silicon surfaces

Journal of the Electrochemical Society

Volumn 150, Issue 12, 2003, Pages

  Shimizu, Hirofumi ^a  

^a NIHON UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COPPER; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH FROM MELT; DEPOSITION; ELECTRON TRAPS; IRON; POTENTIAL ENERGY; SCHOTTKY BARRIER DIODES; SURFACES;

ATOMIC BRIDGING; ELECTRON CAPTURE; NEGATIVE CHARGE; SURFACE PHOTOVOLTAGE MEASUREMENT;

SEMICONDUCTING SILICON;

EID: 0346421175     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1619991     Document Type: Article

References (34)

1. D. Graf, M. Grundner, L. Muhihoff, and M. Dellith, J. Appl. Phys., 69, 7620 (1991)
2. O. J. Anttila, M. V. Tilli, M. Schaekers, and C. L. Claeys, J. Electrochem. Soc., 139, 1180 (1992)
3. T. Ohmi, T. Imaoka, I. Sugiyama, and T. Kezuka, J. Electrochem. Soc., 139, 3317 (1992)
4. J. Morinaga, M. Suyama, and T. Ohmi, J. Electrochem. Soc., 141, 2834 (1994)
5. L. Mouche, F. Tardif, and J. Derrien, J. Electrochem. Soc., 142, 2395 (1995)
6. G. J. Norga, M. Platero, K. A. Black, A. J. Reddy, J. Michel, and L. C. Kimerling, J. Electrochem. Soc., 144, 2801 (1997).
7. G. Li, E. A. Kneer, B. Vermeire, H. G. Parks, S. Raghavan, and Joong S. Jeon, J. Electrochem. Soc., 145, 241 (1998).
8. J. S. Kim, H. Morita, J. D. Joo, and T. Ohmi, J. Electrochem. Soc., 144, 3275 (1997).
9. A. M. Goodman, J. Appl. Phys., 32, 2550 (1961).
10. R. S. Nakhmanson, Solid-State Electron., 18, 617 (1975).
11. E. Kamieniecki, J. Vac. Sci. Technol., 20, 811 (1982).
12. C. Munakata, S. Nishimatsu, N. Honma, and K. Yagi, Jpn. J. Appl. Phys., Part 1, 23, 1451 (1984).
13. C. Munakata and S. Nishimatsu, Jpn. J. Appl. Phys., Part 1, 25, 807 (1986).
14. C. Munakata, Jpn. J. Appl. Phys., Part 1, 27, 759 (1988).
15. J. Lagowski, P. Edelman, A. M. Krontkiewicz, O. Milic, W. Henley, L. Jastrzebski, and A. M. Hoff, Appl. Phys. Lett., 32, 3043 (1993).
16. L. Kronik and Y. Shapira, Surf. Sci. Rep., 37, 1 (1999).
17. D. K. Schroder, Meas. Sci. Technol., 12, R16 (2001).
18. C. Munakata and H. Shimizu, Semicond. Sci. Technol., 5, 991 (1990).
19. H. Shimizu and C. Munakata, Semicond. Sci. Technol., 6, 756 (1991).
20. W. Kern and D. A. Puotinen, RCA Rev., 31, 187 (1970).
21. G. Eisenman, Advances in Analytical Chemistry and Instrumentation, R. N. Reilley, Editor, p. 339, John Wiley & Sons, New York (1965).
22. R. K. Ilner, The Chemistry of Silica, p. 88, Wiley, New York (1965).
23. H. Shimizu and C. Munakata, J. Appl. Phys., 73, 8336 (1993).
24. S. Kawado, T. Tanigaki, T. Maruyama, M. Yamasaki, O. Nishima, and Y. Oka, in Semiconductor Silicon 1986, H. R. Huff, T. Abe, and B. Kolbesen, Editors, PV 86-4, p. 989, The Electrochemical Society Proceedings Series, Pennington, NJ (1986).
25. H. Shimizu and C. Munakata, Appl. Phys. Lett., 62, 276 (1993).
26. H. Shimizu and C. Munakata, Appl. Phys. Lett., 64, 3598 (1994).
27. H. Shimizu, Jpn. J. Appl. Phys., Part 1, 41, 5976 (2002).
28. H. Shimizu and S. Ishiwari, Semicond. Sci. Technol., 15, 776 (2000).
29. J. Ruzyllo, P. Roman, J. Staffa, I. Kashkoush, and E. Kamieniecki, Proc. SPIE, 2876, 162 (1996).
30. C. Munakata, Oyo Butsuri, 53, 176 (1984), in Japanese.
31. K. Kinameri, C. Munakata, and K. Mayama, J. Phys. E, 21, 91 (1988).
32. R. R. Strohmeier, Surf. Interface Anal., 15, 51 (1990).
33. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys., 68, 1272 (1990).
34. A. Thanalakis, J. Phys. C, 8, 655 (1975).