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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 183, Issue 1-2, 2001, Pages 146-153

High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering

(5) Gustafsson, T a Lu, H C b Busch, B W b Schulte, W H b Garfunkel, E b

a RUTGERS UNIVERSITY (United States)

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; FILM GROWTH; ION BEAMS; PARTICLE BEAM DYNAMICS; PERMITTIVITY; SILICA; ULTRATHIN FILMS;

HIGH RESOLUTION DEPTH PROFILING; MEDIUM ENERGY ION SCATTERING (MEIS);

GATES (TRANSISTOR);

EID: 0035399325 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00619-4 Document Type: Article

Times cited : (43)

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