Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7641-7646

  Satta Alessandra, A ^a,e   Schuhmacher, J ^a   Whelan, C M ^a   Vandervorst, W ^a   Brongersma, S H ^a   Beyer, G P ^a   Maex, K ^a,e   Vantomme, A ^b   Viitanen, M M ^c   Brongersma, H H ^c   Besling, W F A ^d  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

^c Calipso BV   (Netherlands)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; THERMOANALYSIS; THICKNESS CONTROL; TITANIUM NITRIDE;

ATOMIC LAYER DEPOSITION (ALD);

FILM GROWTH;

EID: 0037115655     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1522485     Document Type: Article

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