Growth of aluminum nitride on porous silica by atomic layer chemical vapour deposition

Applied Surface Science

Volumn 165, Issue 2, 2000, Pages 193-202

  Puurunen, R L ^a,b   Root, A ^c   Sarv, P ^d   Haukka, S ^b   Iiskola, E I ^b   Lindblad, M ^c   Krause, A O I ^a  

^a AALTO UNIVERSITY   (Finland)

^b Microchemistry Ltd   (Finland)

^c Fortum Oil and Gas Oy   (Finland)

^d NATIONAL INSTITUTE OF CHEMICAL PHYSICS AND BIOPHYSICS   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; POROUS MATERIALS; SILICA; SURFACE CHEMISTRY;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); SILOXANE BRIDGES; TRIMETHYLALUMINUM;

ALUMINUM COMPOUNDS;

EID: 0034272807     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00440-2     Document Type: Article

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