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Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4571-4573

Initial growth mechanism of atomic layer deposited TiN

(6) Satta, A a,b Vantomme, A b Schuhmacher, J a Whelan, C M a Sutcliffe, V c Maex, K a,d

a IMEC (Belgium)

b KU LEUVEN (Belgium)

c TEXAS INSTRUMENTS (Belgium)

d UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; MOLECULAR DYNAMICS; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SUBSTRATES; SURFACES; THERMAL EFFECTS; THICKNESS MEASUREMENT; TITANIUM NITRIDE;

ATOMIC LAYER DEPOSITION; FILM THICKNESS; LIGAND EXCHANGE REACTIONS; NONLINEAR GROWTH;

METALLIC FILMS;

EID: 3042784694 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1760217 Document Type: Article

Times cited : (31)

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