Physical characterisation of high-k gate stacks deposited on HF-last surfaces

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 86-92

  Bender, H ^a   Conard, T ^a   Nohira, H ^a   Petry, J ^a   Richard, O ^a   Zhao, C ^a   Brijs, B ^a   Besling, W ^b   Detavernier, C ^c   Vandervorst, W ^a   Caymax, M ^a   De Gendt, S ^a   Chen, J ^d   Kluth, J ^d   Tsai, W ^d   Maes, J W ^e  

^a IMEC   (Belgium)

^b Philips c o IMEC   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

^d International Sematech c o IMEC   (Belgium)

^e ASM International NV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY ANALYSIS; CROSS SECTION TEM; FILM DENSITY; GROWTH CURVES; HIGH-K GATE STACKS; LOWER DENSITY; PHYSICAL CHARACTERISATION; X RAY REFLECTIVITY;

RECONFIGURABLE HARDWARE;

EID: 35148821130     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967553     Document Type: Conference Paper

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