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Thin Solid Films

Volumn 386, Issue 1, 2001, Pages 41-52

Nucleation and growth during tungsten atomic layer deposition on SiO2 surfaces

(4) Elam, J W a Nelson, C E a Grubbs, R K a George, S M a

a UNIVERSITY OF COLORADO (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BACKSCATTERING; DEPOSITION; ELECTRON SCATTERING; FILM GROWTH; HYDROXYLATION; NUCLEATION; SILANES; SILICA; SURFACE ROUGHNESS; TUNGSTEN; TUNGSTEN COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD); FRANK-VAN DER MERWE MECHANISMS; TUNGSTEN HEXAFLUORIDE;

METALLIC FILMS;

EID: 0035342047 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)00762-3 Document Type: Article

Times cited : (82)

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