Crystallization behavior of thin ALD-Al2O3 films

Thin Solid Films

Volumn 425, Issue 1-2, 2003, Pages 216-220

  Jakschik, Stefan ^a,b   Schroeder, Uwe ^a   Hecht, Thomas ^a   Gutsche, Martin ^a   Seidl, Harald ^a   Bartha, Johann W ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Al2O3; Atomic layer deposition (ALD); Crystallization; Dielectric constant

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CAPACITORS; CRYSTALLIZATION; ELECTRODEPOSITION; PERMITTIVITY; X RAY DIFFRACTION;

ATOMIC LAYER DEPOSITION (ALD);

THIN FILMS;

EID: 0037415948     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01262-2     Document Type: Article

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