Initial stage of the ultrathin oxide growth in water vapor on Si(100) surface

Electrochemical and Solid-State Letters

Volumn 3, Issue 7, 2000, Pages 346-349

  Kim, Yong Bae ^a,c,d   Tuominen, Marko ^b   Raaijmakers, Ivo ^a,c   De Blank, Rene ^a   Wilhelm, Rudi ^a,c   Haukka, Suvi ^b  

^a ASM International NV   (Netherlands)

^b ASM Microchemistry Oy   (Finland)

^c ELECTROCHEMICAL SOCIETY

^d AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL CLEANING; CHEMICAL VAPOR DEPOSITION; DESORPTION; FILM GROWTH; OXIDATION; SILICA; SILICON WAFERS; SURFACE CLEANING; ULTRATHIN FILMS; VAPORS; WATER;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD);

DIELECTRIC FILMS;

EID: 0034228027     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391145     Document Type: Article

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