-
2
-
-
0029232125
-
94 GHz power amplifier using phemt technology
-
L. Marosi, M. Sholley, J. Goel, A. Faris, M. Siddiqui, D.J. Stones, and K. Tan. 94 ghz power amplifier using phemt technology. IEEE MTT-S International Microwave Symposium Digest, 3:1597-1600, 1995.
-
(1995)
IEEE MTT-S International Microwave Symposium Digest
, vol.3
, pp. 1597-1600
-
-
Marosi, L.1
Sholley, M.2
Goel, J.3
Faris, A.4
Siddiqui, M.5
Stones, D.J.6
Tan, K.7
-
9
-
-
33646727480
-
Compact and broadband microstrip power amplifier MMIC with 400- mW output power using 0.15-f-1m GaAs PHEMTs
-
A Bessemoulin, S. Mahon, A. Dadello, G. McCulloch, and J. Harvey. Compact and Broadband Microstrip Power Amplifier MMIC with 400- mW Output Power Using 0.15-f-1m GaAs PHEMTs. European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, pages 41-44, 2005.
-
(2005)
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS
, vol.2005
, pp. 41-44
-
-
Bessemoulin, A.1
Mahon, S.2
Dadello, A.3
McCulloch, G.4
Harvey, J.5
-
10
-
-
33847142838
-
Low cost MMIC chipset for vsat ground terminals
-
Y. Butel, D. Langrez, J.F. Villemazet, G. Coury, J. Decroix, and J.L. Cazaux. Low cost mmic chipset for vsat ground terminals. 2005 European Microwave Conference, 3:1559-1562, 2005.
-
(2005)
2005 European Microwave Conference
, vol.3
, pp. 1559-1562
-
-
Butel, Y.1
Langrez, D.2
Villemazet, J.F.3
Coury, G.4
Decroix, J.5
Cazaux, J.L.6
-
12
-
-
0028056634
-
A high-power q-band phemt for communication terminal applications
-
P.M. Smith, C.T. Creamer, WF. Kopp, D.W Ferguson, P. Ho, and J. R. Willhite. A high-power q-band phemt for communication terminal applications. 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4), pages 809-12 vol.2, 1994.
-
(1994)
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4)
, vol.2
, pp. 809-812
-
-
Smith, P.M.1
Creamer, C.T.2
Kopp, W.F.3
Ferguson, D.W.4
Ho, P.5
Willhite, J.R.6
-
13
-
-
21644473269
-
A high power q-band MMIC power amplifier based on dual-recess 0.15 f-1m phemt
-
IEEE
-
Q.H. Wang, M.Y. Kao, S. Nayak, K.S. Kong, and c.F. Campbell. A high power q-band mmic power amplifier based on dual-recess 0.15 f-1m phemt. Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE, pages 133-136, 2004.
-
(2004)
Compound Semiconductor Integrated Circuit Symposium, 2004
, pp. 133-136
-
-
Wang, Q.H.1
Kao, M.Y.2
Nayak, S.3
Kong, K.S.4
Campbell, C.F.5
-
14
-
-
0000792303
-
Novel w-band monolithic push-pull power amplifiers
-
Huei Wang, R. Lai, M. Biedenbender, G.S. Dow, and B. R. Allen. Novel w-band monolithic push-pull power amplifiers. IEEE Journal of SolidState Circuits, 30(10):1055-1061, 1995.
-
(1995)
IEEE Journal of SolidState Circuits
, vol.30
, Issue.10
, pp. 1055-1061
-
-
Wang, H.1
Lai, R.2
Biedenbender, M.3
Dow, G.S.4
Allen, B.R.5
-
15
-
-
0035542083
-
Mimic power amplifier for ka-band communication system
-
Eung-Ho Rhee. Mimic power amplifier for ka-band communication system. Journal of the Korean Physical Society, 39(6):1095-1099, 2001.
-
(2001)
Journal of the Korean Physical Society
, vol.39
, Issue.6
, pp. 1095-1099
-
-
Rhee, E.-H.1
-
16
-
-
85010997615
-
Low-cost ehf power amplifiers. MILCOM
-
G.W. Wroblewski, F. McMahon, M. Kleidermacher, and D.W. Ferguson. Low-cost ehf power amplifiers. MILCOM '92 - 'Communications - Fusing Command, Control and Intelligence' Conference Record (Cat. No. 92CH3131-0), pages 966-70 vol.3, 1992.
-
(1992)
92 - 'Communications - Fusing Command, Control and Intelligence' Conference Record (Cat. No. 92CH3131-0)
, vol.3
, pp. 966-970
-
-
Wroblewski, G.W.1
McMahon, F.2
Kleidermacher, M.3
Ferguson, D.W.4
-
17
-
-
30944467553
-
A highly efficient q-band MMIC 2.8 watt output power amplifier based on 0.15f-1m ingaas/gaas phemt process technology
-
IEEE
-
M.V. Aust, AK. Sharma, O. Fordham, R. Grundbacher, R. To, R. Tsai, and R. Lai. A highly efficient q-band mmic 2.8 watt output power amplifier based on 0.15f-1m ingaas/gaas phemt process technology. Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE, pages 228-231, 2005.
-
(2005)
Compound Semiconductor Integrated Circuit Symposium 2005. CSIC '05
, pp. 228-231
-
-
Aust, M.V.1
Sharma, A.K.2
Fordham, O.3
Grundbacher, R.4
To, R.5
Tsai, R.6
Lai, R.7
-
18
-
-
0032294866
-
A high-power and high-efficiency monolithic power amplifier at 28 GHz for Imds applications
-
M.K. Siddiqui, AK. Sharma, L.G. Callejo, and R. Lai. A high-power and high-efficiency monolithic power amplifier at 28 ghz for Imds applications. IEEE Transactions on Microwave Theory and Techniques, 46(12):2226-32, 1998.
-
(1998)
IEEE Transactions on Microwave Theory and Techniques
, vol.46
, Issue.12
, pp. 2226-2232
-
-
Siddiqui, M.K.1
Sharma, A.K.2
Callejo, L.G.3
Lai, R.4
-
19
-
-
0032314851
-
3 watt ka-band MMIC hpa and driver amplifier implemented in a fully selective 0.15 f-1m power phemt process
-
J.J. Komiak, W Kong, P.C. Chao, and K. Nichols. 3 watt ka-band mmic hpa and driver amplifier implemented in a fully selective 0.15 f-1m power phemt process. GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No. 98CH36260), pages 45-9, 1998.
-
(1998)
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No. 98CH36260)
, pp. 45-49
-
-
Komiak, J.J.1
Kong, W.2
Chao, P.C.3
Nichols, K.4
-
20
-
-
0029715032
-
Highly efficient compact q-band MMIC power amplifier using 2-mil substrate and partially-matched output
-
vol.1
-
J.A. Lester, Y Hwang, J. Chi, R. Lai, M. Biedenbender, and P.D. Chow. Highly efficient compact q-band mmic power amplifier using 2-mil substrate and partially-matched output. Microwave Symposium Digest, 1996., IEEE MTT-S International, 1:153-155 vol.l, 1996.
-
(1996)
Microwave Symposium Digest, 1996., IEEE MTT-S International
, vol.1
, pp. 153-155
-
-
Lester, J.A.1
Hwang, Y.2
Chi, J.3
Lai, R.4
Biedenbender, M.5
Chow, P.D.6
-
21
-
-
0031347490
-
A 1.4 watt q-band gaas phemt MMIC
-
S.J. Nash, A. Platzker, R Wohlert, and C. Liss. A 1.4 watt q-band gaas phemt mmic. GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 (Cat. No.97CH36098), pages 283-6, 1997.
-
(1997)
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 (Cat. No.97CH36098)
, pp. 283-286
-
-
Nash, S.J.1
Platzker, A.2
Wohlert, R.3
Liss, C.4
-
22
-
-
0028044432
-
Power phemt module delivers 4 watts, 38% p.a.e over the 18.0 to 21.2 GHz band
-
Bernard Kraemer, Raymond Basset, Charles Baughman, Patrick Chye, Ding Day, and John Wei. Power phemt module delivers 4 watts, 38% p.a.e. over the 18.0 to 21.2 ghz band. IEEE MTT-S International Microwave Symposium Digest, 2:801-804, 1994.
-
(1994)
IEEE MTT-S International Microwave Symposium Digest
, vol.2
, pp. 801-804
-
-
Kraemer, B.1
Basset, R.2
Baughman, C.3
Chye, P.4
Day, D.5
Wei, J.6
-
23
-
-
0035175517
-
Extremely high pldb MMIC amplifiers for ka-band applications
-
R. Lai, R Grundbacher, M. Barsky, A. Oki, M. Siddiqui, B. Pitman, R Katz, P. Tran, L. Callejo, and D. Streit. Extremely high pldb mmic amplifiers for ka-band applications. GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191), pages 115-17, 2001.
-
(2001)
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
, pp. 115-117
-
-
Lai, R.1
Grundbacher, R.2
Barsky, M.3
Oki, A.4
Siddiqui, M.5
Pitman, B.6
Katz, R.7
Tran, P.8
Callejo, L.9
Streit, D.10
-
24
-
-
0029696986
-
A high power and high efficiency power amplifier for local multipoint distribution service
-
vol.2
-
M.K. Siddiqui, A.K. Sharma, L.G. Callejo, Chung-Hsu Chen, Kin Tan, and Huan-Chun Yen. A high power and high efficiency power amplifier for local multipoint distribution service. Microwave Symposium Digest, 1996., IEEE MTT-S International, 2:701-704 vol.2, 1996.
-
(1996)
Microwave Symposium Digest, 1996., IEEE MTT-S International
, vol.2
, pp. 701-704
-
-
Siddiqui, M.K.1
Sharma, A.K.2
Callejo, L.G.3
Chen, C.-H.4
Tan, K.5
Yen, H.-C.6
-
26
-
-
0027969861
-
Compact high gain w-band and v-band pseudomorphic HEMT MMIC power amplifiers
-
S.W Duncan, A. Eskandarian, D. Gill, B. Golja, B. Power, D.W Tu, S. Svensson, S. Weinreb, M. Zimmerman, and N. Byer. Compact high gain w-band and v-band pseudomorphic hemt mmic power amplifiers. Microwave and Millimeter- Wave Monolithic Circuits Symposium, 1994. Digest of" Papers., IEEE 1994, pages 33-36, 1994.
-
(1994)
Microwave and Millimeter- Wave Monolithic Circuits Symposium 1994. Digest of" Papers IEEE 1994
, pp. 33-36
-
-
Duncan, S.W.1
Eskandarian, A.2
Gill, D.3
Golja, B.4
Power, B.5
Tu, D.W.6
Svensson, S.7
Weinreb, S.8
Zimmerman, M.9
Byer, N.10
-
27
-
-
0027962067
-
1.5 watts v-band power amplifier using phemt technology
-
L. Marosi, D. Yamauchi, J. Goel, G. Onak, D.l. Stones, A. Sharma, K. Tan, B. Brunner, and J. Mancini. 1.5 watts v-band power amplifier using phemt technology. Microwave Symposium Digest, 1994., IEEE MTT-S International, pages 653-656 vol.2, 1994.
-
(1994)
Microwave Symposium Digest, 1994., IEEE MTT-S International
, vol.2
, pp. 653-656
-
-
Marosi, L.1
Yamauchi, D.2
Goel, J.3
Onak, G.4
Stones, D.I.5
Sharma, A.6
Tan, K.7
Brunner, B.8
Mancini, J.9
-
28
-
-
0042843566
-
A 60-GHz high efficiency monolithic power amplifier using O.I-J.1m PHEMT's
-
Seng-Woon Chen, P.M. Smith, S.-M.J. Liu, WF Kopp, and TJ. Rogers. A 60-GHz high efficiency monolithic power amplifier using O.I-J.1m PHEMT's. IEEE Microwave and Guided Wave Letters, 5(6):201-203, 1995.
-
(1995)
IEEE Microwave and Guided Wave Letters
, vol.5
, Issue.6
, pp. 201-203
-
-
Chen, S.-W.1
Smith, P.M.2
Liu, S.-M.J.3
Kopp, W.F.4
Rogers, T.J.5
-
29
-
-
0028497528
-
A high efficiency V-band monolithic HEMT power amplifier
-
RE. Kasody, G.S. Dow, A.K. Sharma, M.V. Aust, D. Yamauchi, R. Lai, M. Biedenbender, K.L. Tan, and B. R. Allen. A high efficiency V-band monolithic HEMT power amplifier. IEEE Microwave and Guided Wave Letters, 4(9):303-304, 1994.
-
(1994)
IEEE Microwave and Guided Wave Letters
, vol.4
, Issue.9
, pp. 303-304
-
-
Kasody, R.E.1
Dow, G.S.2
Sharma, A.K.3
Aust, M.V.4
Yamauchi, D.5
Lai, R.6
Biedenbender, M.7
Tan, K.L.8
Allen, B.R.9
-
30
-
-
0028016688
-
A high power and high efficiency monolithic power amplifier at v-band using pseudomorphic hemts
-
A.K. Sharma, G. Onak, R. Lai, and K.L. Tan. A high power and high efficiency monolithic power amplifier at v-band using pseudomorphic hemts. Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994, pages 73-76, 1994.
-
(1994)
Microwave and Millimeter-Wave Monolithic Circuits Symposium 1994. Digest of Papers., IEEE 1994
, pp. 73-76
-
-
Sharma, A.K.1
Onak, G.2
Lai, R.3
Tan, K.L.4
-
31
-
-
0030711807
-
60 GHz highefficiency HEMT MMIC chip set development for high-power solid state power amplifier
-
vol.3
-
Y Hwang, J. Lester, G. Schreyer, G. Zell, S. Schrier, D. Yamauchi, G. Onak, B. Kasody, R. Kono, YC. Chen, and R. Lai. 60 GHz highefficiency HEMT MMIC chip set development for high-power solid state power amplifier. Microwave Symposium Digest, 1997., IEEE MTT-S International, 3:1179-1182 vol.3, 1997.
-
(1997)
Microwave Symposium Digest, 1997., IEEE MTT-S International
, vol.3
, pp. 1179-1182
-
-
Hwang, Y.1
Lester, J.2
Schreyer, G.3
Zell, G.4
Schrier, S.5
Yamauchi, D.6
Onak, G.7
Kasody, B.8
Kono, R.9
Chen, Y.C.10
Lai, R.11
-
33
-
-
33847734411
-
A compact 6.5-w phemt MMIC power amplifier for ku-band applications
-
C.-H. Lin, H.-Z. Liu, c.-K. Chu, H.-K. Huang, c.-C. Liu, c.-H. Chang, C.-L. Wu, C.-S. Chang, and Y-H. Wang. A compact 6.5-w phemt mmic power amplifier for ku-band applications. IEEE Microwave and Wireless Components Letters, 17(2):154-156, 2007.
-
(2007)
IEEE Microwave and Wireless Components Letters
, vol.17
, Issue.2
, pp. 154-156
-
-
Lin, C.-H.1
Liu, H.-Z.2
Chu, C.-K.3
Huang, H.-K.4
Liu, C.-C.5
Chang, C.-H.6
Wu, C.-L.7
Chang, C.-S.8
Wang, Y.-H.9
-
34
-
-
46149114372
-
A fully matched ku-band 9w phemt MMIC high power amplifier
-
C.H. Lin, H.Z. Liu, C.K. Chu, H.K. Huang, YH. Wang, C.C. Liu, C.H. Chang, c.L. Wu, and C.S. Chang. A fully matched ku-band 9w phemt mmic high power amplifier. Compound Semiconductor Integrated Circuit Symposium, 2006 IEEE, pages 165-168, 2006.
-
(2006)
Compound Semiconductor Integrated Circuit Symposium, 2006 IEEE
, pp. 165-168
-
-
Lin, C.H.1
Liu, H.Z.2
Chu, C.K.3
Huang, H.K.4
Wang, Y.H.5
Liu, C.C.6
Chang, C.H.7
Wu, C.L.8
Chang, C.S.9
-
35
-
-
0031238156
-
Design of high-power, high-efficiency 60- GHz mmics using an improved nonlinear phemt mode!
-
O.S.A. Tang, K.H.G. Duh, S.M.J. Liu, P.M. Smith, WF Kopp, T.J. Rogers, and D.J. Pritchard. Design of high-power, high-efficiency 60- ghz mmics using an improved nonlinear phemt mode!. IEEE Journal of Solid-State Circuits, 32(9):1326-1333, 1997.
-
(1997)
IEEE Journal of Solid-State Circuits
, vol.32
, Issue.9
, pp. 1326-1333
-
-
Tang, O.S.A.1
Duh, K.H.G.2
Liu, S.M.J.3
Smith, P.M.4
Kopp, W.F.5
Rogers, T.J.6
Pritchard, D.J.7
-
36
-
-
0041592429
-
Integrated power amplifier for 60 GHz wireless applications
-
M. Varonen, M. Karkkainen, P. Kangaslahti, and V. Porra. Integrated power amplifier for 60 GHz wireless applications. Microwave Symposium Digest, 2003 IEEE MTT-S International, pages 915-918 vol.2, 2003.
-
(2003)
Microwave Symposium Digest 2003 IEEE MTT-S International
, vol.2
, pp. 915-918
-
-
Varonen, M.1
Karkkainen, M.2
Kangaslahti, P.3
Porra, V.4
-
37
-
-
0024938030
-
GaAs molecular beam epitaxy monolithic power amplifiers at V-band
-
G. Hegazi, H.-L. A. Hung, J.L. Singer, FR. Phelleps, A.B. Cornfeld, T Smith, J.F Bass, HE Carlson, and H.c. Huang. GaAs molecular beam epitaxy monolithic power amplifiers at V-band. IEEE MTT-S International Microwave Symposium Digest, 1:209-213, 1989.
-
(1989)
IEEE MTT-S International Microwave Symposium Digest
, vol.1
, pp. 209-213
-
-
Hegazi, G.1
Hung, H.-L.A.2
Singer, J.L.3
Phelleps, F.R.4
Cornfeld, A.B.5
Smith, T.6
Bass, J.F.7
Carlson, H.E.8
Huang, H.C.9
-
38
-
-
33644927002
-
Ku-band MMIC power amplifiers developed using MSAG MESFET technology
-
58, 60, 62, 64, 66, 68, 70, 72, 74, 76, 78, 80, 82, 377
-
I. Bahl. Ku-band MMIC power amplifiers developed using MSAG MESFET technology. Microwave Journal, Euro-Global Edition, 49(2):56, 58, 60, 62, 64, 66, 68, 70, 72, 74, 76, 78, 80, 82, 2006. 377
-
(2006)
Microwave Journal, Euro-Global Edition
, vol.49
, Issue.2
, pp. 56
-
-
Bahl, I.1
-
39
-
-
0026186610
-
High performance MESFET power amplifiers for high volume application in Ka band
-
J. Mondal, D. Carlson, C. Pulver, M. Vickberg, and J. Geddes. High performance MESFET power amplifiers for high volume application in Ka band. Microwave and Optical Technology Letters, 4(8):286-288, 1991.
-
(1991)
Microwave and Optical Technology Letters
, vol.4
, Issue.8
, pp. 286-288
-
-
Mondal, J.1
Carlson, D.2
Pulver, C.3
Vickberg, M.4
Geddes, J.5
-
40
-
-
0027814351
-
A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers
-
TC. Ho, Seng-Woon Chen, K. Pande, and P.D. Rice. A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers. IEEE Transactions on Microwave Theory and Techniques, 41 (12):2288-2294, 1993.
-
(1993)
IEEE Transactions on Microwave Theory and Techniques
, vol.41
, Issue.12
, pp. 2288-2294
-
-
Ho, T.C.1
Chen, S.2
Pande, K.3
Rice, P.D.4
-
41
-
-
0026835912
-
Ka-band high efficiency power amplifier MMIC with 0.30 m MESFET for high volume applications
-
J. Mondal, J. Geddes, D. Carlson, M. Vickberg, S. Bounnak, and C. Anderson. Ka-band high efficiency power amplifier MMIC with 0.30 m MESFET for high volume applications. IEEE Transactions on Microwave T heory and Techniques, 40(3):563-566, 1992.
-
(1992)
IEEE Transactions on Microwave T Heory and Techniques
, vol.40
, Issue.3
, pp. 563-566
-
-
Mondal, J.1
Geddes, J.2
Carlson, D.3
Vickberg, M.4
Bounnak, S.5
Anderson, C.6
-
42
-
-
0026385720
-
A W-band doubler/amplifier chain using a MMIC varactor doubler and a MMIC power MESFET amplifier
-
G. Hegazi, E. Chang, J. Singer, F Phelleps, P. McNally, K. Pande, P. Rice, and P. Pages. A W-band doubler/amplifier chain using a MMIC varactor doubler and a MMIC power MESFET amplifier. IEEE MTT-S International Microwave Symposium Digest, 3:933-936, 1991.
-
(1991)
IEEE MTT-S International Microwave Symposium Digest
, vol.3
, pp. 933-936
-
-
Hegazi, G.1
Chang, E.2
Singer, J.3
Phelleps, F.4
McNally, P.5
Pande, K.6
Rice, P.7
Pages, P.8
-
43
-
-
0026623648
-
A monolithic Ka-band transmitter using 0.25 J.1m GaAs MESFET technology
-
H. Wang, M.V. Aust, D. Yang, R. Becker, E. Rezek, B. Allen, and L. Fletcher. A monolithic Ka-band transmitter using 0.25 J.1m GaAs MESFET technology. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual, pages 157- 160, 1991.
-
(1991)
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991 Technical Digest 1991, 13th Annual
, pp. 157-160
-
-
Wang, H.1
Aust, M.V.2
Yang, D.3
Becker, R.4
Rezek, E.5
Allen, B.6
Fletcher, L.7
-
44
-
-
0029220533
-
A miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 J.1m MESFET technology
-
Y Kalayci, R. Tempel, W Lutke, M. Akpinar, and I. Wolff. A miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 J.1m MESFET technology. Microwave Symposium Digest, 1995., IEEE MTT-S International, pages 1623-1626 vol.3, 1995.
-
(1995)
Microwave Symposium Digest, 1995., IEEE MTT-S International
, vol.3
, pp. 1623-1626
-
-
Kalayci, Y.1
Tempel, R.2
Lutke, W.3
Akpinar, M.4
Wolff, I.5
-
45
-
-
0026679435
-
A 0.25-watt threestage Q-band MESFET monolithic power amplifier
-
H. Yang, R.M. Herman, K.W Angel, A.M. Chao, M.J. Schindler, M. Adlerstein, Y Tajima, and D.M. Danzilio. A 0.25-watt threestage Q-band MESFET monolithic power amplifier. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual, pages 161-164, 1991.
-
(1991)
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991 Technical Digest 1991., 13th Annual
, pp. 161-164
-
-
Yang, H.1
Herman, R.M.2
Angel, K.W.3
Chao, A.M.4
Schindler, M.J.5
Adlerstein, M.6
Tajima, Y.7
Danzilio, D.M.8
-
46
-
-
0024127923
-
V-band monolithic power MESFET amplifiers
-
G. Hegazi, H.-L. Hung, F Phelleps, L. Holdeman, A. Cornfeld, T Smith, J. Allison, and H. Huang. V-band monolithic power MESFET amplifiers. Microwave Symposium Digest, 1988., IEEE MTTS International, pages 409-412 vol 1, 1988.
-
(1988)
Microwave Symposium Digest, 1988., IEEE MTTS International
, vol.1
, pp. 409-412
-
-
Hegazi, G.1
Hung, H.-L.2
Phelleps, F.3
Holdeman, L.4
Cornfeld, A.5
Smith, T.6
Allison, J.7
Huang, H.8
-
47
-
-
0025551348
-
35-GHz monolithic GaAs FET power amplifiers
-
T Ho, F Phelleps, G. Hegazi, K. Pande, H. Huang, P. Rice, and P. Pages. 35-GHz monolithic GaAs FET power amplifiers. Military Communications Conference, 1990. MILCOM '90, Conference Record, A New Era. 1990 IEEE, pages 483-485 vol 1, 1990.
-
(1990)
Military Communications Conference, 1990 MILCOM '90, Conference Record, A New Era. 1990 IEEE
, vol.1
, pp. 483-485
-
-
Ho, T.1
Phelleps, F.2
Hegazi, G.3
Pande, K.4
Huang, H.5
Rice, P.6
Pages, P.7
-
49
-
-
0032682884
-
Composite-channel InP HEMT for W-band power amplifiers
-
Y. Chen, P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T Block, M. Wojtowicz, L. Tran, V. Medvedev, H.C. Yen, D.C. Streit, and A. Brown. Composite-channel InP HEMT for W-band power amplifiers. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pages 305-306, 1999.
-
(1999)
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
, pp. 305-306
-
-
Chen, Y.1
Chin, P.2
Ingram, D.3
Lai, R.4
Grundbacher, R.5
Barsky, M.6
Block, T.7
Wojtowicz, M.8
Tran, L.9
Medvedev, V.10
Yen, H.C.11
Streit, D.C.12
Brown, A.13
-
50
-
-
0029342529
-
W-band high efficiency InP-based power HEMT with 600 GHz frnax
-
P M Smith, S-M J Liu, M-Y Kao, P Ho, S C Wang, K H G Duh, S T Fu, and P C Chao. W-Band High Efficiency InP-Based Power HEMT with 600 GHz frnax. IEEE Microwave and Guided Wave Letters, 5(7):230-232, 1995.
-
(1995)
IEEE Microwave and Guided Wave Letters
, vol.5
, Issue.7
, pp. 230-232
-
-
Smith, P.M.1
Liu, S.-M.J.2
Kao, M.-Y.3
Ho, P.4
Wang, S.C.5
Duh, K.H.G.6
Fu, S.T.7
Chao, P.C.8
-
51
-
-
1642379543
-
A 20 mW, 150 GHz InP HEMT MMIC power amplifier module
-
L. Samoska, A. Peralta, M. Hu, M. Micovic, and A. Schmitz. A 20 mW, 150 GHz InP HEMT MMIC Power Amplifier Module. Microwave and Wireless Components Letters, IEEE, 14(2):56-58, 2004.
-
(2004)
Microwave and Wireless Components Letters, IEEE
, vol.14
, Issue.2
, pp. 56-58
-
-
Samoska, L.1
Peralta, A.2
Hu, M.3
Micovic, M.4
Schmitz, A.5
-
52
-
-
0032314850
-
W-band InPbased HEMT MMIC power amplifiers using finite-ground CPW design
-
M. Yu, M. Matloubian, P. Petre, L. Hamilton, R Bowen, M. Lui, H.C. Sun, C. Ngo, P. Janke, D. Baker, and R. Robertson. W-band InPbased HEMT MMIC power amplifiers using finite-ground CPW design. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), pages 37-40, 1998.
-
(1998)
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
, pp. 37-40
-
-
Yu, M.1
Matloubian, M.2
Petre, P.3
Hamilton, L.4
Bowen, R.5
Lui, M.6
Sun, H.C.7
Ngo, C.8
Janke, P.9
Baker, D.10
Robertson, R.11
-
53
-
-
0028483630
-
44-GHz highefficiency InP-HEMT MMIC power amplifier
-
FLam, M. Matloubian, A. Igawa, C. Chou, A. Kurdoghlian, C. Ngo, L. Jelloian, A. Brown, M. Thompson, and L. Larson. 44-GHz highefficiency InP-HEMT MMIC power amplifier. IEEE Microwave and Guided Wave Letters, 4(8):277-278, 1994.
-
(1994)
IEEE Microwave and Guided Wave Letters
, vol.4
, Issue.8
, pp. 277-278
-
-
Matloubian, F.M.1
Igawa, A.2
Chou, C.3
Kurdoghlian, A.4
Ngo, C.5
Jelloian, L.6
Brown, A.7
Thompson, M.8
Larson, L.9
-
54
-
-
0034271243
-
Design and fabrication of a wideband 56- to 63-GHz monolithic power amplifier with very high power-added efficiency
-
O.S. Andy Tang, S.M. Joseph Liu, Pane C. Chao, Wendel M.T. Kong, K.C. Hwang, Kirby Nichols, and John Heaton. Design and fabrication of a wideband 56- to 63-ghz monolithic power amplifier with very high power-added efficiency. IEEE Journal of Solid-State Circuits, 35(9):1298-1306, 2000.
-
(2000)
IEEE Journal of Solid-State Circuits
, vol.35
, Issue.9
, pp. 1298-1306
-
-
Andy Tang, O.S.1
Joseph Liu, S.M.2
Chao, P.C.3
Kong, W.M.T.4
Hwang, K.C.5
Nichols, K.6
Heaton, J.7
-
55
-
-
0033323150
-
High efficiency monolithic InP HEMT V-band power amplifier
-
S.M.J. Liu, O.S.A. Tang, W Kong, K. Nichols, J. Heaton, and P.c. Chao. High efficiency monolithic InP HEMT V-band power amplifier. GaAs IC Symposium, 1999. 21st Annual, pages 145-147, 1999.
-
(1999)
GaAs IC Symposium, 1999 21st Annual
, pp. 145-147
-
-
Liu, S.M.J.1
Tang, O.S.A.2
Kong, W.3
Nichols, K.4
Heaton, J.5
Chao, P.C.6
-
56
-
-
0034318883
-
Very high efficiency v-band power inp HEMT mmics
-
WM.T Kong, S.C. Wang, Pane-Chane Chao, Der-Wei Tu, Kuichul Hwang, O.S.A. Tang, Shih-Ming Liu, Pin Ho, K. Nichols, and J. Heaton. Very high efficiency v-band power inp hemt mmics. IEEE Electron Device Letters, 21(11):521-523, 2000.
-
(2000)
IEEE Electron Device Letters
, vol.21
, Issue.11
, pp. 521-523
-
-
Kong, W.M.T.1
Wang, S.C.2
Chao, P.-C.3
Tu, D.-W.4
Hwang, K.5
Tang, O.S.A.6
Liu, S.-M.7
Ho, P.8
Nichols, K.9
Heaton, J.10
-
57
-
-
0033330053
-
A single chip I-w inp HEMT vband module
-
YC. Chen, D.L. Ingram, D. Yamauchi, B. Brunner, J. Kraus, M. Barsky, R. Grundbacher, S.K. Cha, R. Lai, T Block, M. Wojtowicz, TP. Chin, B. Allen, H.C. Yen, and D.C. Streit. A single chip I-w inp hemt vband module. GaAs IC Symposium, 1999. 21st Annual, pages 149-152, 1999.
-
(1999)
GaAs IC Symposium 1999. 21st Annual
, pp. 149-152
-
-
Chen, Y.C.1
Ingram, D.L.2
Yamauchi, D.3
Brunner, B.4
Kraus, J.5
Barsky, M.6
Grundbacher, R.7
Cha, S.K.8
Lai, R.9
Block, T.10
Wojtowicz, M.11
Chin, T.P.12
Allen, B.13
Yen, H.C.14
Streit, D.C.15
-
58
-
-
0032206964
-
A 95-GHz inp HEMT MMIC amplifier with 427-mw power output
-
yc. Chen, D.L. Ingram, R. Lai, M. Barsky, R. Grunbacher, T. Block, H.c. Yen, and D.C. Streit. A 95-ghz inp hemt mmic amplifier with 427-mw power output. IEEE Microwave and Guided Wave Letters, 8(11):399-401, 1998.
-
(1998)
IEEE Microwave and Guided Wave Letters
, vol.8
, Issue.11
, pp. 399-401
-
-
Chen, Y.1
Ingram, D.L.2
Lai, R.3
Barsky, M.4
Grunbacher, R.5
Block, T.6
Yen, H.C.7
Streit, D.C.8
-
59
-
-
33847793010
-
A 20-mw gband monolithic driver amplifier using 0.07-J.1m inp HEMT
-
P. Huang, R. Lai, R. Grundbacher, and B. Gorospe. A 20-mw gband monolithic driver amplifier using 0.07-J.1m inp hemt. Microwave Symposium Digest, 2006. IEEE MTT-S International, pages 806-809, 2006.
-
(2006)
Microwave Symposium Digest 2006. IEEE MTT-S International
, pp. 806-809
-
-
Huang, P.1
Lai, R.2
Grundbacher, R.3
Gorospe, B.4
-
60
-
-
0032685393
-
A 427 mw, 20% compact w-band inp HEMT MMIC power amplifier
-
D.L. Ingram, YC. Chen, J. Kraus, B. Brunner, B. Allen, H.C. Yen, and K.F. Lau. A 427 mw, 20% compact w-band inp hemt mmic power amplifier. Radio Frequency Integrated Circuits (RFlC) Symposium, 1999 IEEE, pages 95-98, 1999.
-
(1999)
Radio Frequency Integrated Circuits (RFlC) Symposium, 1999 IEEE
, pp. 95-98
-
-
Ingram, D.L.1
Chen, Y.C.2
Kraus, J.3
Brunner, B.4
Allen, B.5
Yen, H.C.6
Lau, K.F.7
-
61
-
-
0041663675
-
95 GHz metamorphic HEMT power amplifiers on gaas
-
vol 1
-
K.J. Herrick, S.M. Lardizabal, P.F. Marsh, and C.S. Whelan. 95 ghz metamorphic hemt power amplifiers on gaas. Microwave Symposium Digest, 2003 IEEE MTT-S International, 1:137-140 vol 1, 2003.
-
(2003)
Microwave Symposium Digest 2003 IEEE MTT-S International
, vol.1
, pp. 137-140
-
-
Herrick, K.J.1
Lardizabal, S.M.2
Marsh, P.F.3
Whelan, C.S.4
-
62
-
-
33749242093
-
Metamorphic 94 GHz power amplifier mmics
-
A. Tessmann, A Leuther, C. Schwoerer, and H. Massier. Metamorphic 94 ghz power amplifier mmics. Microwave Symposium Digest, 2005 IEEE MTT-S International, page 4 pp., 2005.
-
(2005)
Microwave Symposium Digest, 2005 IEEE MTT-S International
, pp. 4
-
-
Tessmann, A.1
Leuther, A.2
Schwoerer, C.3
Massier, H.4
-
63
-
-
17444373915
-
A 77 GHz mhemt MMIC chip set for automotive radar systems
-
Dong Min Kang, Ju Yeon Hong, Jae Yeob Shim, Jin-Hee Lee, HyungSup Yoon, and Kyung Ho Lee. A 77 ghz mhemt mmic chip set for automotive radar systems. ETRI Journal, 27(2):133-139, 2005.
-
(2005)
ETRI Journal
, vol.27
, Issue.2
, pp. 133-139
-
-
Kang, D.M.1
Hong, J.Y.2
Shim, J.Y.3
Lee, J.-H.4
Yoon, H.S.5
Lee, K.H.6
-
64
-
-
0347566329
-
Progress in gaas metamorphic HEMT technology for microwave applications
-
IEEE
-
P.M. Smith, D. Dugas, K. Chu, K. Nichols, K.G. Duh, J. Fisher, L. Mt Pleasant, D. Xu, L. Gunter, A. Vera, R. Lender, and D. Meharry. Progress in gaas metamorphic hemt technology for microwave applications. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE, pages 21-24, 2003.
-
(2003)
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium 2003. 25th Annual Technical Digest 2003
, pp. 21-24
-
-
Smith, P.M.1
Dugas, D.2
Chu, K.3
Nichols, K.4
Duh, K.G.5
Fisher, J.6
Mt Pleasant, L.7
Xu, D.8
Gunter, L.9
Vera, A.10
Lender, R.11
Meharry, D.12
-
65
-
-
33847280583
-
Ka-band alganJgan HEMT high power and driver amplifier mmics
-
M. van Heijningen, F.E. van Vliet, R. Quay, F. van Raay, R. Kiefer, S. Muller, D. Krausse, M. Seelmann-Eggebert, M. Mikulla, and M. Schlechtweg. Ka-band alganJgan hemt high power and driver amplifier mmics. Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European, pages 237-240, 2005.
-
(2005)
Gallium Arsenide and Other Semiconductor Application Symposium 2005. EGAAS 2005. European
, pp. 237-240
-
-
Van Heijningen, M.1
Van Vliet, F.E.2
Quay, R.3
Van Raay, F.4
Kiefer, R.5
Muller, S.6
Krausse, D.7
Seelmann-Eggebert, M.8
Mikulla, M.9
Schlechtweg, M.10
-
66
-
-
30944459492
-
Field-plated gan hemts and amplifiers
-
Y-F. Wu, A. Saxler, M. Moore, T. Wisleder, U.K. Mishra, and P. Parikh. Field-plated gan hemts and amplifiers. IEEE Compound Semiconductor Integrated Circuit Symposium (IEEE Cat. No.05CH37701), page 4 pp., 2005.
-
(2005)
IEEE Compound Semiconductor Integrated Circuit Symposium (IEEE Cat. No.05CH37701)
, pp. 4
-
-
Wu, Y.-F.1
Saxler, A.2
Moore, M.3
Wisleder, T.4
Mishra, U.K.5
Parikh, P.6
-
67
-
-
0036068439
-
Applications of sic mesfets and gan hemts in power amplifier design
-
vol.3
-
w.L. Pribble, J.w. Palmour, S.T. Sheppard, R.P. Smith, S.T. Allen, T.J. Smith, Z. Ring, I.I. Sumakeris, AW. Saxler, and J.w. Milligan. Applications of sic mesfets and gan hemts in power amplifier design. Microwave Symposium Digest, 2002 IEEE MTT-S International, 3:1819-1822 vol.3, 2002.
-
(2002)
Microwave Symposium Digest, 2002 IEEE MTT-S International
, vol.3
, pp. 1819-1822
-
-
Pribble, W.L.1
Palmour, J.W.2
Sheppard, S.T.3
Smith, R.P.4
Allen, S.T.5
Smith, T.J.6
Ring, Z.7
Sumakeris, I.I.8
Saxler, A.W.9
Milligan, J.W.10
-
68
-
-
84887338965
-
3.5-watt alganJgan hemts and amplifiers at 35 GHz
-
Y-F. Wu, M. Moore, A Saxler, P. Smith, P.M. Chavarkar, and P. Parikh. 3.5-watt alganJgan hemts and amplifiers at 35 ghz. Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, page 23.5.1, 2003.
-
(2003)
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
, pp. 2351
-
-
Wu, Y.-F.1
Moore, M.2
Saxler, A.3
Smith, P.4
Chavarkar, P.M.5
Parikh, P.6
-
69
-
-
33749257341
-
A k-band alganJgan hfet MMIC amplifier on sapphire using novel superlattice cap layer
-
M. Nishijima, T. Murata, Y Hirose, M. Hikita, N. Negoro, H. Sakai, Y Uemoto, K. Inoue, T. Tanaka, and D. Ueda. A k-band alganJgan hfet mmic amplifier on sapphire using novel superlattice cap layer. Microwave Symposium Digest, 2005 IEEE MTT-S International, page 4 pp., 2005.
-
(2005)
Microwave Symposium Digest, 2005 IEEE MTT-S International
, pp. 4
-
-
Nishijima, M.1
Murata, T.2
Hirose, Y.3
Hikita, M.4
Negoro, N.5
Sakai, H.6
Uemoto, Y.7
Inoue, K.8
Tanaka, T.9
Ueda, D.10
-
70
-
-
33847743889
-
Algan/gan ka-band 5-w MMIC amplifier
-
A. M. Darwish, K. Boutros, B. Luo, B. D. Huebschman, E. Viveiros, and H. A. Hung. Algan/gan ka-band 5-w mmic amplifier. IEEE Transactions on Microwave Theory and Techniques, 54(12):4456-4463, 2006.
-
(2006)
IEEE Transactions on Microwave Theory and Techniques
, vol.54
, Issue.12
, pp. 4456-4463
-
-
Darwish, A.M.1
Boutros, K.2
Luo, B.3
Huebschman, B.D.4
Viveiros, E.5
Hung, H.A.6
-
71
-
-
46149107884
-
5w gan MMIC for millimeter-wave applications
-
IEEE
-
K.S. Boutros, W.B. Luo, Y Ma, G. Nagy, and J. Hacker. 5w gan mmic for millimeter-wave applications. Compound Semiconductor Integrated Circuit Symposium, 2006 IEEE, pages 93-95, 2006.
-
(2006)
Compound Semiconductor Integrated Circuit Symposium
, vol.2006
, pp. 93-95
-
-
Boutros, K.S.1
Luo, W.B.2
Ma, Y.3
Nagy, G.4
Hacker, J.5
-
72
-
-
4544225789
-
Ka-band MMIC power amplifier in GaN HFET technology
-
M. Micovic, A Kurdoghlian, H.P. Moyer, P. Hashimoto, A. Schmitz, I. Milosavljevic, P.J. Willadsen, w.-S. Wong, J. Duvall, M. Hu, M.J. Delaney, and D.H. Chow. Ka-band MMIC power amplifier in GaN HFET technology. Microwave Symposium Digest, 2004 IEEE MTT-S International, 3: 1653-1656, 2004.
-
(2004)
Microwave Symposium Digest, 2004 IEEE MTT-S International
, vol.3
, pp. 1653-1656
-
-
Micovic, M.1
Kurdoghlian, A.2
Moyer, H.P.3
Hashimoto, P.4
Schmitz, A.5
Milosavljevic, I.6
Willadsen, P.J.7
Wong, W.-S.8
Duvall, J.9
Hu, M.10
Delaney, M.J.11
Chow, D.H.12
-
73
-
-
0033688141
-
HBT MMIC 75 GHz and 78 GHz power amplifiers
-
J. R. Guthrie, M. Urteaga, D. Scott, D. Mensa, T. Mathew, Q. Lee, S. Krishnan, S. Jaganathan, Y Betser, and M.J.W. Rodwell. HBT MMIC 75 GHz and 78 GHz power amplifiers. Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), pages 246-9, 2000.
-
(2000)
Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
, pp. 246-249
-
-
Guthrie, J.R.1
Urteaga, M.2
Scott, D.3
Mensa, D.4
Mathew, T.5
Lee, Q.6
Krishnan, S.7
Jaganathan, S.8
Betser, Y.9
Rodwell, M.J.W.10
-
74
-
-
0027667102
-
1.8-W, 6- 18-GHz HBT MMIC power amplifier with lO-dB gain and 37% peak power-added efficiency
-
Mike Salib, Aditya Gupta, Fazal Ali, and Dale Dawson. 1.8-W, 6- 18-GHz HBT MMIC power amplifier with lO-dB gain and 37% peak power-added efficiency. IEEE Microwave and Guided Wave Letters, 3(9):325-326, 1993.
-
(1993)
IEEE Microwave and Guided Wave Letters
, vol.3
, Issue.9
, pp. 325-326
-
-
Salib, M.1
Gupta, A.2
Ali, F.3
Dawson, D.4
-
75
-
-
0033693981
-
A Ka-band HBT MMIC power amplifier
-
378
-
S. Tanaka, S. Yamanouchi, Y Amamiya, T. Niwa, K. Hosoya, H. Shimawaki, and K. Honjo. A Ka-band HBT MMIC power amplifier. 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), pages 553-6 vo1.l, 2000. 378
-
(2000)
2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)
, vol.1
, pp. 553-556
-
-
Tanaka, S.1
Yamanouchi, S.2
Amamiya, Y.3
Niwa, T.4
Hosoya, K.5
Shimawaki, H.6
Honjo, K.7
-
76
-
-
0026953358
-
High-efficiency Ku-band HBT MMIC power amplifier
-
Paul J. Bartusiak, Tim Henderson, Tae Kim, and Burhan Bayraktaroglu. High-efficiency Ku-band HBT MMIC power amplifier. IEEE Electron Device Letters, 13(11):584-586, 1992.
-
(1992)
IEEE Electron Device Letters
, vol.13
, Issue.11
, pp. 584-586
-
-
Bartusiak, P.J.1
Henderson, T.2
Kim, T.3
Bayraktaroglu, B.4
-
77
-
-
0242334014
-
40 GHz MMIC power amplifier in InP DHBT technology
-
Yun Wei, Krishnan Sundararajan, Miguel Urteaga, Zach Griffith, Dennis Scott, Vamsi Paidi, Navin Parthasarathy, and Mark Rodwell. 40 GHz MMIC Power Amplifier in InP DHBT Technology. Proceedings IEEE Lester Eastman Conference on High Performance Devices, pages 352-357, 2002.
-
(2002)
Proceedings IEEE Lester Eastman Conference on High Performance Devices
, pp. 352-357
-
-
Wei, Y.1
Sundararajan, K.2
Urteaga, M.3
Griffith, Z.4
Scott, D.5
Paidi, V.6
Parthasarathy, N.7
Rodwell, M.8
-
78
-
-
0033727090
-
0.5 Watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier
-
K.w. Kobayashi, A.K. Oki, Li-W. Yang, A. Gutierrez-Aitken, P. Chin, Don Sawdai, W. Okamura, J. Lester, E. Kaneshiro, P.C. Grossman, K. Sato, T. R. Block, H.C. Yen, and D.C. Streit. 0.5 Watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pages 250-253, 2000.
-
(2000)
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
, pp. 250-253
-
-
Kobayashi, K.W.1
Oki, A.K.2
Yang, L.-W.3
Gutierrez-Aitken, A.4
Chin, P.5
Sawdai, D.6
Okamura, W.7
Lester, J.8
Kaneshiro, E.9
Grossman, P.C.10
Sato, K.11
Block, T.R.12
Yen, H.C.13
Streit, D.C.14
-
79
-
-
20044366361
-
G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers
-
Vamsi K. Paidi, Zach Griffith, Yun Wei, Mattias Dahlstrom, Miguel Urteaga, Navin Parthasarathy, Munkyo Seo, Lorene Samoska, Andy Fung, and Mark J. W. Rodwell. G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers. IEEE Transactions on Microwave T heory and Techniques, 53(2):598-605, 2005.
-
(2005)
IEEE Transactions on Microwave T Heory and Techniques
, vol.53
, Issue.2
, pp. 598-605
-
-
Paidi, V.K.1
Griffith, Z.2
Wei, Y.3
Dahlstrom, M.4
Urteaga, M.5
Parthasarathy, N.6
Seo, M.7
Samoska, L.8
Fung, A.9
Rodwell, M.J.W.10
-
80
-
-
4444295247
-
W-Band InP DHBT MMIC power amplifiers
-
G.A. Ellis, A. Kurdoghlian, R. Bowen, M. Wetzel, and M. Delaney. W-Band InP DHBT MMIC power amplifiers. Microwave Symposium Digest, 2004 IEEE MTT-S International, 1 :231-234, 2004.
-
(2004)
Microwave Symposium Digest 2004 IEEE MTT-S International
, vol.1
, pp. 231-234
-
-
Ellis, G.A.1
Kurdoghlian, A.2
Bowen, R.3
Wetzel, M.4
Delaney, M.5
-
81
-
-
0042093505
-
75 GHz 80 mW InP DHBT power amplifier
-
Yun Wei, Miguel Urteaga, Zach Griffith, Dennis Scott, Shouxuan Xie, Vamsi Paidi, Navin Parthasarathy, and Mark Rodwell. 75 GHz 80 mW InP DHBT power amplifier. IEEE MTT-S International Microwave Symposium Digest, 2:919-921, 2003.
-
(2003)
IEEE MTT-S International Microwave Symposium Digest
, vol.2
, pp. 919-921
-
-
Wei, Y.1
Urteaga, M.2
Griffith, Z.3
Scott, D.4
Xie, S.5
Paidi, V.6
Parthasarathy, N.7
Rodwell, M.8
-
82
-
-
0034441953
-
K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC
-
W. Okamura, L.W. Yang, A Gutierrez-Aitken, E. Kaneshiro, J. Lester, D. Sawdai, P.c. Grossman, K. Kobayashi, H.c. Yen, A. Oki, P. Chin, and T. Block. K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC. GaAs IC Symposium, 2000. 22nd Annual, pages 219-222, 2000.
-
(2000)
GaAs IC Symposium, 2000. 22nd Annual
, pp. 219-222
-
-
Okamura, W.1
Yang, L.W.2
Gutierrez-Aitken, A.3
Kaneshiro, E.4
Lester, J.5
Sawdai, D.6
Grossman, P.C.7
Kobayashi, K.8
Yen, H.C.9
Oki, A.10
Chin, P.11
Block, T.12
-
83
-
-
0033332340
-
25 GHz InGaAs/InAIAs-InP HBT power MMIC with 48% power added efficiency
-
K.w. Kobayashi, Li Yang, A. Gutierrez-Aitken, E. Kaneshiro, F.M. Yamada, H.C. Yen, T. R. Block, AK. Oki, and D.C. Streit. 25 GHz InGaAs/InAIAs-InP HBT power MMIC with 48% power added efficiency. Technical Digest - International Electron Devices Meeting, pages 409-412, 1999.
-
(1999)
Technical Digest - International Electron Devices Meeting
, pp. 409-412
-
-
Kobayashi, K.W.1
Yang, L.2
Gutierrez-Aitken, A.3
Kaneshiro, E.4
Yamada, F.M.5
Yen, H.C.6
Block, T.R.7
Oki, A.K.8
Streit, D.C.9
-
84
-
-
4444327826
-
Common base amplifier with 7 -db gain at 176 GHz in inp mesa dhbt technology
-
IEEE
-
V. Paidi, Z. Griffith, Y Wei, M. Dahlstrom, N. Parthasarathy, M. Urteaga, M.J.W. Rodwell, A Fung, and L. Samoska. Common base amplifier with 7 -db gain at 176 ghz in inp mesa dhbt technology. Radio Frequency Integrated Circuits (RFlC) Symposium, 2004. Digest of Papers. 2004 IEEE, pages 189-192, 2004.
-
(2004)
Radio Frequency Integrated Circuits (RFlC) Symposium 2004. Digest of Papers. 2004
, pp. 189-192
-
-
Paidi, V.1
Griffith, Z.2
Wei, Y.3
Dahlstrom, M.4
Parthasarathy, N.5
Urteaga, M.6
Rodwell, M.J.W.7
Fung, A.8
Samoska, L.9
-
85
-
-
0034840918
-
Ultra-efficient X-Band and linear-efficient Ka-Band power amplifiers using indium phosphide double heterojunction bipolar transistors
-
T. Quach, W. Okamura, A. Gutierrez-Aitken, T. Jenkins, E. Kaneshiro, L. Kehias, A. Oki, D. Sawdai, P. Watson, R. Welch, R. Worley, and H.C. Yen. Ultra-efficient X-Band and linear-efficient Ka-Band power amplifiers using indium phosphide double heterojunction bipolar transistors. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pages 501-504, 2001.
-
(2001)
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
, pp. 501-504
-
-
Quach, T.1
Okamura, W.2
Gutierrez-Aitken, A.3
Jenkins, T.4
Kaneshiro, E.5
Kehias, L.6
Oki, A.7
Sawdai, D.8
Watson, P.9
Welch, R.10
Worley, R.11
Yen, H.C.12
-
86
-
-
2442640658
-
60ghz transceiver circuits in sige bipolar technology
-
S. Reynolds, B. Floyd, U. Pfeiffer, and T. Zwick. 60ghz transceiver circuits in sige bipolar technology. 2004 IEEE International SolidState Circuits Conference (IEEE Cat. No.04CH375I9), pages 442-538 Vol 1, 2004.
-
(2004)
2004 IEEE International SolidState Circuits Conference (IEEE Cat. No.04CH375I9)
, vol.1
, pp. 442-538
-
-
Reynolds, S.1
Floyd, B.2
Pfeiffer, U.3
Zwick, T.4
-
87
-
-
4444221554
-
A 77 GHz sige power amplifier for potential applications in automotive radar systems
-
Ullrich R. Pfeiffer, Scott K. Reynolds, and Brian A Floyd. A 77 ghz sige power amplifier for potential applications in automotive radar systems. Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFlC) Symposium and IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, pages 91-94, 2004.
-
(2004)
Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFlC) Symposium and IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
, pp. 91-94
-
-
Pfeiffer, U.R.1
Reynolds, S.K.2
Floyd, B.A.3
-
89
-
-
27644545694
-
Design of 24 GHz sige HBT balanced power amplifier for system-on-a-chip ultra-wideband applications
-
N. Kinayman, A. Jenkins, D. Helms, and I. Gresham. Design of 24 ghz sige hbt balanced power amplifier for system-on-a-chip ultra-wideband applications. 2005 IEEE Radio Frequency Integrated Circuits (RFlC) Symposium (IEEE Cat. No. 05CH37652), pages 91-4, 2005.
-
(2005)
2005 IEEE Radio Frequency Integrated Circuits (RFlC) Symposium (IEEE Cat. No. 05CH37652)
, pp. 91-94
-
-
Kinayman, N.1
Jenkins, A.2
Helms, D.3
Gresham, I.4
-
90
-
-
41649093968
-
A monolithic 24 GHz, 20 dbm, 14% pae sige HBT power amplifier
-
J.P. Comeau, J.M. Andrews, and J.D. Cressler. A monolithic 24 ghz, 20 dbm, 14% pae sige hbt power amplifier. Microwave Conference, 2006. 36th European, pages 419-422, 2006.
-
(2006)
Microwave Conference, 2006 36th European
, pp. 419-422
-
-
Comeau, J.P.1
Andrews, J.M.2
Cressler, J.D.3
-
92
-
-
33749172828
-
Sige transformer matched power amplifier for operation at millimeter-wave frequencies
-
U. R. Pfeiffer, D. Goren, B.A. Floyd, and S.K. Reynolds. Sige transformer matched power amplifier for operation at millimeter-wave frequencies. Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European, pages 141-144, 2005.
-
(2005)
Solid-State Circuits Conference 2005. ESSCIRC 2005. Proceedings of the 31st European
, pp. 141-144
-
-
Pfeiffer, U.R.1
Goren, D.2
Floyd, B.A.3
Reynolds, S.K.4
-
93
-
-
34250322527
-
A 60ghz transmitter with integrated antenna in 0.18JLm sige bicmos technology
-
Chi-Hsueh Wang, Yi-Hsien Cho, Chin-Shen Lin, Huei Wang, ChunHsiung Chen, Dow-Chih Niu, J. Yeh, Chwan-Ying Lee, and 1. Chern. A 60ghz transmitter with integrated antenna in 0.18JLm sige bicmos technology. Solid-State Circuits, 2006 IEEE International Conference Digest of" Technical Papers, page 10 pp., 2006.
-
(2006)
Solid-State Circuits, 2006 IEEE International Conference Digest of" Technical Papers
, pp. 10
-
-
Wang, C.-H.1
Cho, Y.-H.2
Lin, C.-S.3
Wang, H.4
Chen, C.H.5
Niu, D.-C.6
Yeh, J.7
Lee, C.-Y.8
Chern, J.9
-
94
-
-
5444245779
-
Fully integrated sige vcos with powerful output buffer for 77 -GHz automotive radar systems and applications around 100 GHz
-
Hao Li, H.-M. Rein, T. Suttorp, and J. Bock. Fully integrated sige vcos with powerful output buffer for 77 -ghz automotive radar systems and applications around 100 ghz. IEEE Journal of" Solid-State Circuits, 39(10):1650-1658, 2004.
-
(2004)
IEEE Journal of" Solid-State Circuits
, vol.39
, Issue.10
, pp. 1650-1658
-
-
Li, H.1
Rein, H.-M.2
Suttorp, T.3
Bock, J.4
-
96
-
-
33746887267
-
An electrical funnel: A broadband signal combining method
-
E. Afshari, H. Bhat, Xiaofeng Li, and A Hajimiri. An electrical funnel: a broadband signal combining method. Solid-State Circuits, 2006 IEEE International Conference Digest of Technical Papers, page 10 pp., 2006.
-
(2006)
Solid-State Circuits, 2006 IEEE International Conference Digest of Technical Papers
, pp. 10
-
-
Afshari, E.1
Bhat, H.2
Li, X.3
Hajimiri, A.4
-
97
-
-
1042300825
-
A fully integrated 7-18 GHz power amplifier with on-chip output balun in 75 GHz-fT sige-bipolar
-
W Bakalskil, A Vasylyev, W Simburger, R. Thuringer, H. Wolilmuth, AL. Scholtz, and P. Weger. A fully integrated 7-18 ghz power amplifier with on-chip output balun in 75 ghz-fT sige-bipolar. BipolarlBiCMOS Circuits and Technology Meeting, 2003. Proceedings of the, pages 61- 64, 2003.
-
(2003)
Bipolarl BiCMOS Circuits and Technology Meeting 2003. Proceedings of the
, pp. 61-64
-
-
Bakalskil, W.1
Vasylyev, A.2
Simburger, W.3
Thuringer, R.4
Wolilmuth, H.5
Scholtz, A.L.6
Weger, P.7
-
98
-
-
25144468768
-
A 24-GHz, +14.5-dbm fully integrated power amplifier in 0.18-JLm CMOS
-
A. Komijani, A. Natarajan, and A Hajimiri. A 24-ghz, +14.5-dbm fully integrated power amplifier in 0.18-JLm cmos. IEEE Journal of" Solid-State Circuits, 40(9):1901-1908, 2005.
-
(2005)
IEEE Journal of" Solid-State Circuits
, vol.40
, Issue.9
, pp. 1901-1908
-
-
Komijani, A.1
Natarajan, A.2
Hajimiri, A.3
-
99
-
-
30344482587
-
17-GHz 50-60 mw power amplifiers in O.13-JLm standard CMOS
-
Andriy V. Vasylyev, Peter Weger, Winfried Bakalski, and Werner Simbuerger. 17-ghz 50-60 mw power amplifiers in O.13-JLm standard cmos. IEEE Microwave and Wireless Components Letters, 16(1):37-39, 2006.
-
(2006)
IEEE Microwave and Wireless Components Letters
, vol.16
, Issue.1
, pp. 37-39
-
-
Vasylyev, A.V.1
Weger, P.2
Bakalski, W.3
Simbuerger, W.4
-
100
-
-
14544269856
-
Millimeterwave CMOS circuit design
-
H. Shigematsu, T. Hirose, F. Brewer, and M. Rodwell. Millimeterwave cmos circuit design. IEEE Transactions on Microwave Theory and Techniques, 53(2):472-477, 2005.
-
(2005)
IEEE Transactions on Microwave Theory and Techniques
, vol.53
, Issue.2
, pp. 472-477
-
-
Shigematsu, H.1
Hirose, T.2
Brewer, F.3
Rodwell, M.4
-
101
-
-
33749186904
-
An 18-GHz, 10.9- dbm fully-integrated power amplifier with 23.5% pae in 130-nm CMOS
-
Changhua Cao, Haifeng Xu, Yu Su, and K.K. O. An 18-ghz, 10.9- dbm fully-integrated power amplifier with 23.5% pae in 130-nm cmos. Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European, pages 137-140, 2005.
-
(2005)
Solid-State Circuits Conference, 2005 ESSCIRC 2005. Proceedings of the 31st European
, pp. 137-140
-
-
Cao, C.1
Xu, H.2
Su, Y.3
-
102
-
-
85010948909
-
-
Technical report, Technical University of Denmark, Orsted, EMI, Class Notes, 31415 RF-Communication Circuits, Chap. V
-
Vidkjer J. Power and nonlinear rf-amplifiers. Technical report, Technical University of Denmark, Orsted, EMI, 2005. Class Notes, 31415 RF-Communication Circuits, Chap. V.
-
(2005)
Power and Nonlinear Rf-amplifiers
-
-
Vidkjer, J.1
-
103
-
-
0026882348
-
Performance capabilities of HBT devices and circuits for satellite communication
-
K. Fricke, G. Gatti, H.L. Hartnagel, V. Krozer, and J. Wiirfl. Performance capabilities of hbt devices and circuits for satellite communication. Microwave Theory and Techniques, IEEE Transactions on, 40(6):1205-1214, 1992.
-
(1992)
Microwave Theory and Techniques IEEE Transactions on
, vol.40
, Issue.6
, pp. 1205-1214
-
-
Fricke, K.1
Gatti, G.2
Hartnagel, H.L.3
Krozer, V.4
Wiirfl, J.5
-
105
-
-
0035506622
-
Influence of barrier thickness on the high-power performance of algan/gan hemts
-
V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, J. Shealy, and L. Eastman. Influence of barrier thickness on the high-power performance of algan/gan hemts. IEEE Electron Device Letters, 22(11):504-506, 2001.
-
(2001)
IEEE Electron Device Letters
, vol.22
, Issue.11
, pp. 504-506
-
-
Tilak, V.1
Green, B.2
Kaper, V.3
Kim, H.4
Prunty, T.5
Smart, J.6
Shealy, J.7
Eastman, L.8
-
106
-
-
0027539504
-
A 0.5-w complementary algaasgaas HBT push-pull amplifier at 10 GHz
-
H.Q. Tserng, D.G. Hill, and T.S. Kim. A 0.5-w complementary algaasgaas hbt push-pull amplifier at 10 ghz. IEEE Microwave and Guided Wave Letters, 3(2):45-47, 1993.
-
(1993)
IEEE Microwave and Guided Wave Letters
, vol.3
, Issue.2
, pp. 45-47
-
-
Tserng, H.Q.1
Hill, D.G.2
Kim, T.S.3
-
107
-
-
0027676891
-
Integrated complementary HBT microwave push-pull and darlington amplifiers with p-n-p active loads
-
K.W Kobayashi, D.K. Umemoto, Jr. Velebir, J. R., A.K. Oki, and D.C. Streit. Integrated complementary hbt microwave push-pull and darlington amplifiers with p-n-p active loads. IEEE Journal of SolidState Circuits, 28(10):1011-1017, 1993.
-
(1993)
IEEE Journal of SolidState Circuits
, vol.28
, Issue.10
, pp. 1011-1017
-
-
Kobayashi, K.W.1
Umemoto, D.K.2
Velebir, J.R.3
Oki, A.K.4
Streit, D.C.5
-
108
-
-
12244303639
-
High linearity and high efficiency of class-b power amplifiers in gan HEMT technology
-
V. Paidi, S. Long, M.I.W Rodwell, Shouxuan Xie, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S.P. DenBaars, and U.K. Mishra. High linearity and high efficiency of class-b power amplifiers in gan hemt technology. IEEE Transactions on Microwave Theory and Techniques, 51 (2):643-652, 2003.
-
(2003)
IEEE Transactions on Microwave Theory and Techniques
, vol.51
, Issue.2
, pp. 643-652
-
-
Paidi, V.1
Long, S.2
Rodwell, M.I.W.3
Xie, S.4
Coffie, R.5
Moran, B.6
Heikman, S.7
Keller, S.8
Chini, A.9
DenBaars, S.P.10
Mishra, U.K.11
-
109
-
-
85010931535
-
Design of coplanar power amplifiers for mm-wave system applications including thermal aspects
-
A. Bessemoulin, W. Marsetz, Y. Baeyens, R. Osorio, H. Massier, A Hulsmann, and M. Schlechtweg. Design of coplanar power amplifiers for mm-wave system applications including thermal aspects. GAAS 2000. Conference Proceedings, page 4 pp., 2000.
-
(2000)
GAAS 2000 Conference Proceedings
, pp. 4
-
-
Bessemoulin, A.1
Marsetz, W.2
Baeyens, Y.3
Osorio, R.4
Massier, H.5
Hulsmann, A.6
Schlechtweg, M.7
-
110
-
-
0033678425
-
A 7.4 to 8.4 GHz high efficiency phemt three-stage power amplifier
-
S.L.G. Chu, A. Platzker, M. Borkowski, R. Mallavarpu, M. Snow, A Bowlby, D. Teeter, T. Kazior, and K. Alavi. A 7.4 to 8.4 ghz high efficiency phemt three-stage power amplifier. Microwave Symposium Digest., 2000 IEEE MTT-S International, 2:947-950, 2000.
-
(2000)
Microwave Symposium Digest. 2000 IEEE MTT-S International
, vol.2
, pp. 947-950
-
-
Chu, S.L.G.1
Platzker, A.2
Borkowski, M.3
Mallavarpu, R.4
Snow, M.5
Bowlby, A.6
Teeter, D.7
Kazior, T.8
Alavi, K.9
-
111
-
-
0036438404
-
A 4-watt x-band compact coplanar high power amplifier MMIC with 18- db gain and 25-% pae
-
A. Bessemoulin, M. R. Quay, S. Ramberger, and M. Schlechtweg. A 4-watt x-band compact coplanar high power amplifier mmic with 18- db gain and 25-% pae. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest, pages 189-192, 2002.
-
(2002)
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium 2002. 24th Annual Technical Digest
, pp. 189-192
-
-
Bessemoulin, A.1
Quay, M.R.2
Ramberger, S.3
Schlechtweg, M.4
-
112
-
-
0029773938
-
Highefficiency gainp/gaas HBT MMIC power amplifier with up to 9 w output power at 10 GHz
-
K. Riepe, H. Leier, U. Seiler, A Marten, and H. Sledzik. Highefficiency gainp/gaas hbt mmic power amplifier with up to 9 w output power at 10 ghz. IEEE Microwave and Guided Wave Letters, 6(1):22-24, 1996.
-
(1996)
IEEE Microwave and Guided Wave Letters
, vol.6
, Issue.1
, pp. 22-24
-
-
Riepe, K.1
Leier, H.2
Seiler, U.3
Marten, A.4
Sledzik, H.5
-
113
-
-
33847312394
-
A 3.2 w coplanar single-device x-band amplifier with gaas HBT
-
F. Lenk, H. Klockenhoff, P. Kurpas, A Maabdorf, H.I. Wurfl, and W. Heinrich. A 3.2 w coplanar single-device x-band amplifier with gaas hbt. 2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium, pages 49-52, 2006.
-
(2006)
2005 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
, pp. 49-52
-
-
Lenk, F.1
Klockenhoff, H.2
Kurpas, P.3
Maabdorf, A.4
Wurfl, H.I.5
Heinrich, W.6
-
115
-
-
0035454653
-
Highest efficiency, linear x-band performance using inp dhbts - 48% pae at 30 db c/im3
-
L. Kehias, W. Okamura, E. Kaneshiro, T. Jenkins, T. Quach, P. Watson, R. Welch, R. Worley, AK. Oki, H.c. Yen, and A. Gutierrez-Aitken. Highest efficiency, linear x-band performance using inp dhbts - 48% pae at 30 db c/im3. IEEE Microwave and Wireless Components Letters, 11(9):361-363, 2001.
-
(2001)
IEEE Microwave and Wireless Components Letters
, vol.11
, Issue.9
, pp. 361-363
-
-
Kehias, L.1
Okamura, W.2
Kaneshiro, E.3
Jenkins, T.4
Quach, T.5
Watson, P.6
Welch, R.7
Worley, R.8
Oki, A.K.9
Yen, H.C.10
Gutierrez-Aitken, A.11
-
116
-
-
30944468578
-
An indium phosphide x-band class-e power MMIC with 40% bandwidth
-
IEEE
-
P. Watson, V. Patel, D. Sawdai, T. Quach, H. Axtel, A GutierrezAitken, E. Kaneshiro, W. Lee, A Mattamana, A. Oki, and P. Orlando. An indium phosphide x-band class-e power mmic with 40% bandwidth. Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE, page 4 pp., 2005.
-
(2005)
Compound Semiconductor Integrated Circuit Symposium 2005. CSIC '05
, pp. 4
-
-
Watson, P.1
Patel, V.2
Sawdai, D.3
Quach, T.4
Axtel, H.5
Gutierrez Aitken, A.6
Kaneshiro, E.7
Lee, W.8
Mattamana, A.9
Oki, A.10
Orlando, P.11
-
117
-
-
84948670242
-
High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating sic substrates
-
S.T. Sheppard, R.P. Smith, WL. Pribble, Z. Ring, T. Smith, S.T. Allen, J. Milligan, and J.W. Palmour. High power hybrid and mmic amplifiers using wide-bandgap semiconductor devices on semi-insulating sic substrates. Device Research Conference, 2002. 60th DRC. Conference Digest, pages 175-178, 2002.
-
(2002)
Device Research Conference, 2002 60th DRC. Conference Digest
, pp. 175-178
-
-
Sheppard, S.T.1
Smith, R.P.2
Pribble, W.L.3
Ring, Z.4
Smith, T.5
Allen, S.T.6
Milligan, J.7
Palmour, J.W.8
-
118
-
-
34250343844
-
A compact 16 watt x-band gan-MMIC power amplifier
-
H. Klockenhoff, R. Behtash, 1. Wurfl, W Heinrich, and G. Trankle. A compact 16 watt x-band gan-mmic power amplifier. Microwave Symposium Digest, 2006. IEEE MTT-S International, pages 1846-1849, 2006.
-
(2006)
Microwave Symposium Digest, 2006. IEEE MTT-S International
, pp. 1846-1849
-
-
Klockenhoff, H.1
Behtash, R.2
Wurfl, I.3
Heinrich, W.4
Trankle, G.5
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