HBT MMIC 75 GHz and 78 GHz power amplifiers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 246-249

  Guthrie, J R ^a   Urteaga, M ^a   Scott, D ^a   Mensa, D ^a   Mathew, T ^a   Lee, Q ^a   Krishnan, S ^a   Jaganathan, S ^a   Betser, Y ^a   Rodwell, M J W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CASCODE AMPLIFIERS;

DIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

POWER AMPLIFIERS;

EID: 0033688141     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

1. Y.C. Chen,D.L. Ingram, R.Lai, M. Barsky,R. Grunbacher, T.Block, H.C. Yen, D.C. Streit, "A 95-GHz InP J3EMT MMIC amplifier with 427-mW power output". IEEE Microwave and Guided Wave Lett., 8 (11), Nov. 1998 pp.399-401.
2. Q. Lee, S.C. Martin, D. Mensa, R.P. Smith, J.Guthrie, and M.J.W. Rodwell, "Submicron Transferred-Substrate Hetemjunction Bipolar Transistors" IEEE Electron Device Lett., 20, (8), Aug 1999, pp.396-398.
3. T. Morf, S. Hubschuer, D. Huber, A. Huber, V. Schwarz, H. Jackel, "98-GHz InP/InGaAs HBT Amplifier with 26-dB gain", IEEE Microwave and Guided-Wave Lett., Vol. 9, No. 12, Dec. 1999, pp.523-525.
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6. R. Ramachandran and A.F. Podell, "Segmented cascode HBT for microwave-frequency power amplifiers," U.S. Patent 5066926, November 1991.
7. B. Bayraktaroglu and M. Salib, "Unconditionally thermally stable cascode GAS HBT's for microwave applications", IEEE Microwave and Guided Wave Lett., Vol. 7, no. 7, pp. 187-189, 1997.