High-efficiency GaInP/GaAs HBT MMIC power amplifier with up to 9 W output power at 10 GHz

IEEE Microwave and Guided Wave Letters

Volumn 6, Issue 1, 1996, Pages 22-24

  Riepe, Klaus ^a   Leier, Helmut ^a   Seiler, Ulrich ^a   Marten, Anita ^a   Sledzik, Hardy ^b  

^a DAIMLER AG   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ENERGY EFFICIENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; LITHOGRAPHY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING;

BREAKDOWN VOLTAGE; CIRCUIT SIMULATION; CONVENTIONAL MESA APPROACH; ELECTROMAGNETIC SIMULATOR; GALLIUM INDIUM PHOSPHIDE; MONOLITHIC POWER AMPLIFIER; OPTICAL CONTACT LITHOGRAPHY; POWER ADDED EFFICIENCY; SUBCOLLECTOR CONTACT;

POWER AMPLIFIERS;

EID: 0029773938     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.482059     Document Type: Article

References (10)

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