75 GHz 80 mW InP DHBT power amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 919-921

  Wei, Yun ^a   Urteaga, Miguel ^a   Griffith, Zach ^a   Scott, Dennis ^a   Xie, Shouxuan ^a   Paidi, Vamsi ^a   Parthasarathy, Navin ^a   Rodwell, Mark ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; THERMODYNAMIC STABILITY;

GAIN COMPRESSION;

POWER AMPLIFIERS;

EID: 0042093505     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. Chen, Y.C.; Ingram, D.L.; Lai, R.; Barsky, M.; Grunbacher, R.; Block, T.; Yen, H.C.; Streit, D.C. "A 95-GHz InP HEMT MMIC amplifier with 427-mW power output". IEEE Microwave and Guided Wave Letters, vol.8, (no.11), IEEE, Nov. 1998. p.399-401.
3. Huang, P.; Lin, E.; Lai, R.; Biedenbender, M.; Huang, T.W.; Wang, H.; Geiger, C.; Block, T.; Liu, P.H. "A 94 GHz monolithic high output power amplifier". 1997 IEEE MTT-S International Microwave Symposium Digest, Denver, CO, USA, 8-13 June 1997. New York, NY, USA: IEEE, 1997. p.1175-8 vol.3.
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5. Yun Wei, Sangmin Lee, P.K. Sundararajan, Mattias Dahlstrom, Miguel Urteaga, Mark Rodwell, "High current (100mA) InP/InGaAs/InP DHBTs with 330 GHz fmax." Proceedings of Indium Phosphide and Related Materials Conference, Stockholm, Sweden, May 12-16, Piscataway, NJ, USA: IEEE, 2002. p.47-50
6. Yun Wei, Sangmin Lee, Krishnan Sundararajan, Mattias Dahlstrom,Miguel Urteaga, Mark Rodwell, "W-band InP/InGaAs/InP DHBT MMIC Power Amplifiers." Proceedings of IEEE MTT-S International Microwave Symposium, Seattle, WA, June, 2002, Piscataway, NJ, USA: IEEE, 2002. p.917-20 vol.2.
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