A highly efficient Q-band MMIC 2.8 watt output power amplifier based on 0.15 μm InGaAs/GaAs pHEMT process technology

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 228-231

  Aust, M V ^a   Sharma, A K ^a   Fordham, O ^a   Grundbacher, R ^a   To, R ^a   Tsai, R ^a   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER DENSITIES; POWER PERFORMANCE;

POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 30944467553     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531821     Document Type: Conference Paper

References (9)

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9. Q. H. Wang, et al, "A high power Q-Band MMIC power amplifier based on dual-Recess 0.15um pHEMT," IEEE Compound Semiconductor IC Symposium, Oct, 2004, pp 133-136.