A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 299-302

  Nishijima, Masaaki ^a   Murata, Tomohiro ^a   Hirose, Yutaka ^a   Hikita, Masahiro ^a   Negoro, Noboru ^a   Sakai, Hiroyuki ^a   Uemoto, Yasuhiro ^a   Inoue, Kaoru ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

AlGaN GaN heteroj unction FET; Coplanar waveguides; MMIC amplifiers; Sapphire; Source resistance; Superlattices

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL RECEIVERS; SUPERLATTICES; WAVEGUIDES;

ALGAN/GAN HETEROJUNCTION FET; K BAND; MMIC AMPLIFIERS; SOURCE RESISTANCE;

MICROWAVE AMPLIFIERS;

EID: 33749257341     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516585     Document Type: Conference Paper

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