A 21-26-GHz SiGe bipolar power amplifier MMIC

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 12, 2005, Pages 2583-2597

  Cheung, Tak Shun Dickson ^a,b,c   Long, John R ^a,c,d  

^a IEEE   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Balun; Microwave power amplifiers; Millimeterwave power amplifiers; MMIC power amplifiers; Monolithic transformer; SiGe; SiGe power amplifiers; Silicon germanium

Indexed keywords

BALUN; MICROWAVE POWER AMPLIFIERS; MILLIMETERWAVE POWER AMPLIFIERS; MMIC POWER AMPLIFIERS; MONOLITHIC TRANSFORMER; SIGE; SIGE POWER AMPLIFIERS;

ELECTRIC TRANSFORMERS; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROPROCESSOR CHIPS; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 29044443126     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2005.857424     Document Type: Conference Paper

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