High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 175-178

  Sheppard, S T ^a   Smith, R P ^a   Pribble, W L ^a   Ring, Z ^a   Smith, T ^a   Allen, S T ^a   Milligan, J ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Broadband amplifiers; Gallium nitride; High power amplifiers; MMICs; Power amplifiers; Pulse amplifiers; Semiconductor devices; Semiconductor optical amplifiers; Silicon carbide; Substrates

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; EFFICIENCY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT AMPLIFIERS; MESFET DEVICES; MICROWAVE AMPLIFIERS; MICROWAVE DEVICES; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR OPTICAL AMPLIFIERS; SILICON CARBIDE; SUBSTRATES;

GAN HEMT TRANSISTORS; HIGH POWER AMPLIFIER; HIGH POWER DENSITY; HIGH-POWER MICROWAVE AMPLIFIERS; OUTPUT POWER LEVELS; POWER-ADDED EFFICIENCY; WIDE-BANDGAP SEMICONDUCTOR DEVICES; WIDE-BANDWIDTH AMPLIFIER;

PULSE AMPLIFIERS;

EID: 84948670242     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029585     Document Type: Conference Paper

References (9)

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