Design and fabrication of a wideband 56- to 63-GHz monolithic power amplifier with very high power-added efficiency

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 9, 2000, Pages 1298-1306

  Tang, O S Andy ^a   Liu, S M Joseph ^a,b   Chao, Pane C ^a   Kong, Wendel M T ^a   Hwang, K C ^a   Nichols, Kirby ^a   Heaton, John ^a  

^a BAE SYSTEMS   (United States)

^b WIN Semiconductors Corp   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HEAT SINKS; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

CONTINUOUS WAVE (CW) MEASUREMENT; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (MHEMT); POWER ADDED EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0034271243     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.868039     Document Type: Article

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