95 GHz metamorphic HEMT power amplifiers on GaAs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 137-140

  Herrick, Katherine J ^a   Lardizabal, Steven M ^a   Marsh, Phil F ^a   Whelan, Colin S ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC BREAKDOWN; GAIN CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL PROCESSING;

SIGNAL GAIN;

POWER AMPLIFIERS;

EID: 0041663675     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. C. Nguyen, M. Micovic, "State-of-the-art of GaAs and InP power devices and amplifiers," IEEE Transactions on Electron Devices, Vol 48, No.3, pp. 472-378, Mar 2001.
2. D.L. Ingram, Y.C. Chen, J. Kraus, B. Brunner, B. Allen, H.C. Yen, K.F. Lau, "A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier," Radio Frequency Integrated Circuits (RFIC) Symposium Proc., pp. 95-98, 1999.
3. W.E. Hoke, T.D. Kennedy, A. Torabi, C.S. Whelan, P.P. Marsh, R.E. Leoni, J. H. Jang, I. Adesida, K.L. Chang, K.C. Hsieh,"Properties of metamorphic materials and device structures on GaAs substrates," Int. Conf. On MBE, pp.69-70, 2002.
4. C.S. Whelan, P.P. Marsh, W.E. Hoke, R.A. McTaggart, P.S. Lyman, P.J. Lemonias, S.M. Lardizabal, R.E. Leoni III, S.J. Lichwala, T.E. Kazior, "Millimeter-wave low-noise and high power metamorphic HEMT amplifiers and devices on GaAs substrates," IEEE Journal of Solid State Circuits, Vol. 35, Iss. 9, pp. 1307-1311, Sept 2000.
5. K.C. Hwang, P.C. Chao, C. Creamer, K.B. Nichols, S.Wang, D. Tu, W. Kong, D. Dugas, G. Patton, "Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's," IEEE Electron Device Letters, Vol. 20 Issue: 11, pp. 551-553, Nov 1999.
6. P.P. Marsh, C.S. Whelan, W.E. Hoke, R.E. Leoni III, T.E. Kazior, "Reliability of metamorphic HEMTs on GaAs substrates," GaAs Reliability Workshop Proceedings, pp. 119-132, 200