Common base amplifier with 7- dB gain at 176 GHz in InP mesa DHBT technology

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2004, Pages 189-192

  Paidi, V ^a   Griffith, Z ^a   Wei, Y ^a   Dahlstrom, M ^a   Parthasarathy, N ^a   Urteaga, M ^a   Rodwell, M J W ^a   Fung, A ^b   Samoska, L ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

InP heterojunction bipolar transistor; Millimeter wave amplifier; MMIC amplifiers

Indexed keywords

COMMON BASE AMPLIFIERS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR (DHBT) TECHNOLOGIES; MILLIMETER-WAVE AMPLIFIERS; MMIC AMPLIFIERS; WIDE-BAND COMMUNICATION SYSTEMS;

BANDWIDTH; CAPACITORS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC LINES; ELECTRIC POTENTIAL; MILLIMETER WAVES; MIM DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NETWORKS (CIRCUITS); POWER AMPLIFIERS; RESISTORS; VELOCITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4444327826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Urteaga, et al., "G-Band(140-220-GHz) InP-Based HBT Amplifiers," IEEE Journal of Solid State Circuits, Vol. 38, No. 9, pp. 1451-1456, Sept. 2003.
2. C. Pobanz, et al., "A high-gain monolithic D-band InP HEMT amplifier," IEEE Journal of Solid State Circuits, Vol. 34, pp. 1219-1224, Sept. 1999.
3. R. Lai, et al., "InP HEMT amplifier development for G-band (140-220 GHz) applications," in Int. Electron Devices Meeting Tech. Dig., San Francisco, CA, Dec. 2000, pp. 175-177.
4. L. Samoska, et al., "A 20 mW, 150 GHz InP HEMT MMIC Power Amplifier Module," IEEE Microwave and Wireless Components Letters, Vol 14, No.2, pp. 56-58, Feb. 2004.
5. c ratio," Electron Device Letters, submitted for publication.
6. max using a Graded Carbon-Doped base," 2003 IEEE Device Research Conference, Salt Lake City, UT, June 23-25, 2003, Late news submission.