K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2000, Pages 219-222

  Okamura, W ^a   Yang, L W ^a   Gutierrez Aitken, A ^a   Kaneshiro, E ^a   Lester, J ^a   Sawdai, D ^a   Grossman, P C ^a   Kobayashi, K ^a   Yen, H C ^a   Oki, A ^a   Chin, P ^a   Block, T ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE;

POWER CELLS;

POWER AMPLIFIERS;

EID: 0034441953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)