Progress in GaAs metamorphic HEMT technology for microwave applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 21-24

  Smith, P M ^a   Dugas, D ^a   Chu, K ^a   Nichols, K ^a   Duh, K G ^a   Fisher, J ^a   MtPleasant, L ^a   Xu, D ^a   Gunter, L ^a   Vera, A ^a   Lender, R ^a   Meharry, D ^a  

^a BAE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; POWER ADDED EFFICIENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0347566329     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252354     Document Type: Conference Paper

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