A 3.2 W coplanar single-device X-Band amplifier with GaAs HBT

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 49-52

  Lenk, F ^a   Klockenhoff, H ^a   Kurpas, P ^a   Maassdorf A ^a   Wurfl H J ^a   Heinrich, W ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Heterojunction bipolar transistors; MMIC power amplifiers

Indexed keywords

BAND STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; EMITTER COUPLED LOGIC CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; TUNGSTEN;

EMITTER FINGER SIZE; MMIC POWER AMPLIFIERS; MONOLITHIC AMPLIFIER; X-BAND AMPLIFIER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847312394     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. P. Kurpas, A. Maaßdorf, M. Neuner, W. Doser, P. Heymann, B. Janke, F. Schnieder, T. Bergunde, H. Blanck, Ph. Auxemery, W. Heinrich, J. Würfl, "Flip-Chip mounted 26 V GaInP/GaAs power HBTs", 2004 IEDM Technical Dig., paper ss22p5, 2003.
2. J. Würfl, P. Kurpas, F. Brunner, M. Mai, M. Rudolph, M. Weyers, "Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing," Microelectron. Reliab., vol. 41, no. 8, pp. 1103-1108, August 2001.
3. P. Kurpas, A. Maaßdorf, W. Doser, W. Köhler, P. Heymann, B. Janke, F. Schnieder, H. Blanck, Ph. Auxemery, D. Pons, W. Heinrich, J. Würfl, "Power GaInP/GaAs HBTs for high voltage operation", 2005 GaAs Mantech Proc., vol. 3, pp. 99-102, 2003.
4. J. Hilsenbeck, F. Lenk, W. Heinrich, and J. Würfl, "Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology", 2005 IEEE GaAs IC Symp. Dig.,pp. 223-226, November 2003.