High efficiency monolithic InP HEMT V-band power amplifier

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1999, Pages 145-147

  Liu, S M J ^a   Tang, O S A ^a   Kong, W ^a   Nichols, K ^a   Heaton, J ^a   Chao, P C ^a  

^a LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING INDIUM PHOSPHIDE;

POWER ADDED EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0033323150     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)