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Volumn 53, Issue 2, 2005, Pages 598-605

G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers

Author keywords

InP heterojunction bipolar transistor; Millimeter wave amplifier; Monolithic microwave integrated circuit (MMIC) amplifiers

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; HETEROJUNCTION BIPOLAR TRANSISTORS; INDUCTANCE; INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; SEMICONDUCTING INDIUM PHOSPHIDE; TOPOLOGY;

EID: 20044366361     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.840662     Document Type: Conference Paper
Times cited : (63)

References (6)
  • 1
    • 0041779682 scopus 로고    scopus 로고
    • G-band (140-220-GHz) InP-based HBT amplifiers
    • Sep.
    • M. Urteaga et al., "G-band (140-220-GHz) InP-based HBT amplifiers," IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1451-1456, Sep. 2003.
    • (2003) IEEE J. Solid-State Circuits , vol.38 , Issue.9 , pp. 1451-1456
    • Urteaga, M.1
  • 2
    • 0003246874 scopus 로고    scopus 로고
    • A high-gain monolithic D-band InP HEMT amplifier
    • Sep.
    • C. Pobanz et al., "A high-gain monolithic D-band InP HEMT amplifier," IEEE J. Solid-State Circuits, vol. 34, no. 9, pp. 1219-1224, Sep. 1999.
    • (1999) IEEE J. Solid-State Circuits , vol.34 , Issue.9 , pp. 1219-1224
    • Pobanz, C.1
  • 3
    • 17644447790 scopus 로고    scopus 로고
    • InP HEMT amplifier development for G-band (140-220 GHz) applications
    • San Francisco, CA, Dec.
    • R. Lai et al., "InP HEMT amplifier development for G-band (140-220 GHz) applications," in Int. Electron Devices Meeting Tech. Dig., San Francisco, CA, Dec. 2000, pp. 175-177.
    • (2000) Int. Electron Devices Meeting Tech. Dig. , pp. 175-177
    • Lai, R.1
  • 4
    • 1642379543 scopus 로고    scopus 로고
    • A 20 mW, 150 GHz InP HEMT MMIC power amplifier module
    • Feb.
    • L. Samoska et al., "A 20 mW, 150 GHz InP HEMT MMIC power amplifier module," IEEE Microwave Wireless Compon. Lett., vol. 14, no. 2, pp. 56-58, Feb. 2004.
    • (2004) IEEE Microwave Wireless Compon. Lett. , vol.14 , Issue.2 , pp. 56-58
    • Samoska, L.1
  • 6
    • 4444222089 scopus 로고    scopus 로고
    • max using a graded carbon-doped base
    • presented at the Salt Lake City, UT, Jun. 23-25
    • max using a graded carbon-doped base," presented at the IEEE Device Research Conf., Salt Lake City, UT, Jun. 23-25, 2003.
    • (2003) IEEE Device Research Conf.
    • Dahlstrom, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.