427 mW, 20% compact W-band InP HEMT MMIC power amplifier

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 1999, Pages 95-98

  Ingram, D L ^a   Chen, Y C ^a   Kraus, J ^a   Brunner, B ^a   Allen, B ^a   Yen, H C ^a   Lau, K F ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS; POWER AMPLIFIERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

DRAIN VOLTAGE; POWER ADDED EFFICIENCY;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0032685393     PISSN: 10972633     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)