Applications of SiC MESFETs and GaN HEMTs in power amplifier design

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1819-1822

  Pribble, W L ^a   Palmour, J W ^a   Sheppard, S T ^a   Smith, R P ^a   Allen, S T ^a   Smith, T J ^a   Ring, Z ^a   Sumakeris, J J ^a   Saxler, A W ^a   Milligan, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC IMPEDANCE; ENERGY GAP; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MESFET DEVICES; MILITARY APPLICATIONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON CARBIDE;

HIGH POWER DENSITY; METAL INSULATOR METAL CAPACITORS; POWER AMPLIFIER DESIGN; POWER MATCHING NETWORKS; WIDE BANDGAP;

POWER AMPLIFIERS;

EID: 0036068439     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012216     Document Type: Article

References (5)

1. High-power microwave GaN/AlGaN HEMT’s on semi-insulating silicon carbide substrates
2. High Al-content AlGaN/GaN HEMTs with very high performance
3. Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates
4. High power demonstration at 10 GHz with GaN/AlGaN HEMT hybrid amplifiers
5. A 50-W AlGaN/GaN HEMT amplifier